JPS572548A - Ic electrode structure - Google Patents
Ic electrode structureInfo
- Publication number
- JPS572548A JPS572548A JP7620980A JP7620980A JPS572548A JP S572548 A JPS572548 A JP S572548A JP 7620980 A JP7620980 A JP 7620980A JP 7620980 A JP7620980 A JP 7620980A JP S572548 A JPS572548 A JP S572548A
- Authority
- JP
- Japan
- Prior art keywords
- residue
- passivation
- bonding
- bump
- mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
Landscapes
- Wire Bonding (AREA)
Abstract
PURPOSE:To perform a mini MOD mounting with high bonding yield and high reliability by forming a passivation residue in an aluminum electrode of an IC upon formation of a periphery protective film and bonding a bump through the residue. CONSTITUTION:An aluminum electrode 1 is formed on the surface of the substrate 2 of an IC. The outer periphery of the electrode is covered with a passivation film 3 made of an SiO2, but an insular or lattice-shaped passivation residue 10 is formed in the hole 3a of the passivation upon formation of the film 3. After a Cr layer 4' and the second metallic layer 5' are covered over the aluminum electrode and the residue, an Au plating layer 6' is formed to become a bump of mini MOD mounting. Thus, the stepwise difference on the bonding surface of the bump can be eliminated to improve the yield of the bonding and to perform the mini MOD mounting with high reliability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7620980A JPS572548A (en) | 1980-06-06 | 1980-06-06 | Ic electrode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7620980A JPS572548A (en) | 1980-06-06 | 1980-06-06 | Ic electrode structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS572548A true JPS572548A (en) | 1982-01-07 |
Family
ID=13598772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7620980A Pending JPS572548A (en) | 1980-06-06 | 1980-06-06 | Ic electrode structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS572548A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59117135A (en) * | 1982-12-24 | 1984-07-06 | Hitachi Ltd | Semiconductor device and manufacture of the same |
| JP2008016549A (en) * | 2006-07-04 | 2008-01-24 | Tdk Corp | Electronic components |
-
1980
- 1980-06-06 JP JP7620980A patent/JPS572548A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59117135A (en) * | 1982-12-24 | 1984-07-06 | Hitachi Ltd | Semiconductor device and manufacture of the same |
| JP2008016549A (en) * | 2006-07-04 | 2008-01-24 | Tdk Corp | Electronic components |
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