JPS57106155A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57106155A JPS57106155A JP55181978A JP18197880A JPS57106155A JP S57106155 A JPS57106155 A JP S57106155A JP 55181978 A JP55181978 A JP 55181978A JP 18197880 A JP18197880 A JP 18197880A JP S57106155 A JPS57106155 A JP S57106155A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- bump
- forming
- plating
- psg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
Landscapes
- Wire Bonding (AREA)
Abstract
PURPOSE:To prevent an element pellet from damage by forming a solder or tin layer on the surface of a bump, forming a tape lead of Cu, Ni or the like, thereby eliminating the use of gold and improving the bonding conditions. CONSTITUTION:An element pellet 10 is formed with a bump on the surface (lower surface) of an aluminum pad by a method of forming an element circuit such as PSG/SiO2 layer 15, PSG layer 16 by an ordinary step on an Si substrate 14 and employing electric plating and etching steps. The material of the bump 18 includes Cu, Ni, Fe or alloys thereof as main components, and thin solder or tin plating layer 21 of approx. 0.5-3mum is formed on the surface. The tape lead 12 is formed of Cu, Ni or their alloy. Particularly, the bonding with the bump is formed with a protective film 22 such as organic film or plating film for preventing the oxidation of the surface of the Cu. A Cr layer 19 or Cu layer 20 is formed between the aluminum pad and the bump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55181978A JPS57106155A (en) | 1980-12-24 | 1980-12-24 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55181978A JPS57106155A (en) | 1980-12-24 | 1980-12-24 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57106155A true JPS57106155A (en) | 1982-07-01 |
Family
ID=16110181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55181978A Pending JPS57106155A (en) | 1980-12-24 | 1980-12-24 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57106155A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63275127A (en) * | 1987-05-07 | 1988-11-11 | Matsushita Electric Ind Co Ltd | Electrical connection contact |
-
1980
- 1980-12-24 JP JP55181978A patent/JPS57106155A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63275127A (en) * | 1987-05-07 | 1988-11-11 | Matsushita Electric Ind Co Ltd | Electrical connection contact |
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