JPS5732369A - Sputtering and vapor-depositing method and formation of magnetic gap by said method - Google Patents

Sputtering and vapor-depositing method and formation of magnetic gap by said method

Info

Publication number
JPS5732369A
JPS5732369A JP10598980A JP10598980A JPS5732369A JP S5732369 A JPS5732369 A JP S5732369A JP 10598980 A JP10598980 A JP 10598980A JP 10598980 A JP10598980 A JP 10598980A JP S5732369 A JPS5732369 A JP S5732369A
Authority
JP
Japan
Prior art keywords
light
vapor
sputtering
substrate
magnetic gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10598980A
Other languages
Japanese (ja)
Other versions
JPS5929112B2 (en
Inventor
Kiyotaka Wasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55105989A priority Critical patent/JPS5929112B2/en
Publication of JPS5732369A publication Critical patent/JPS5732369A/en
Publication of JPS5929112B2 publication Critical patent/JPS5929112B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To work a thin film in a magnetic gap with high accuracy by cutting a light leading hole in a substrate holder and monitoring the thickness of a vapor- deposited film from light reflected from the surface of a substrete and light from the surface of the thin film. CONSTITUTION:Electrically conductive transparent glass 23 is attached to a light leading hole 22 cut in the substrate holder 21 of a sputtering and vapor-depositing apparatus. A beam 24 of light such as He-Ne laser beam is led from the hole 22 during sputtering and vapor deposition. This led light is led to the surface of a substrate, and the thickness of a vapor-deposited film is monitored from the intensity of mutual interference of light reflected from the surface of the substrate and light from the surface of the thin film stuck to the substrate. Since the electrically conductive glass 23 is used in this monitoring method, the disturbance of an electric field in the vicinity of the hole 22 is reduced to maintain uniform discharge for sputtering. Accordingly, this sputtering and vapor-depositing method is effective in working a magnetic gap used to form a magnetic head of high accuracy for video signal, etc.
JP55105989A 1980-07-31 1980-07-31 sputter deposition method Expired JPS5929112B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55105989A JPS5929112B2 (en) 1980-07-31 1980-07-31 sputter deposition method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55105989A JPS5929112B2 (en) 1980-07-31 1980-07-31 sputter deposition method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59010581A Division JPS59139125A (en) 1984-01-23 1984-01-23 Formation of magnetic gap

Publications (2)

Publication Number Publication Date
JPS5732369A true JPS5732369A (en) 1982-02-22
JPS5929112B2 JPS5929112B2 (en) 1984-07-18

Family

ID=14422131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55105989A Expired JPS5929112B2 (en) 1980-07-31 1980-07-31 sputter deposition method

Country Status (1)

Country Link
JP (1) JPS5929112B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61294618A (en) * 1985-06-21 1986-12-25 Toshiba Corp Production of magnetic head

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS617914U (en) * 1984-06-20 1986-01-18 ヤンマー農機株式会社 Fertilizing seeding device in direct sowing machine

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61294618A (en) * 1985-06-21 1986-12-25 Toshiba Corp Production of magnetic head

Also Published As

Publication number Publication date
JPS5929112B2 (en) 1984-07-18

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