JPS5929112B2 - sputter deposition method - Google Patents
sputter deposition methodInfo
- Publication number
- JPS5929112B2 JPS5929112B2 JP10598980A JP10598980A JPS5929112B2 JP S5929112 B2 JPS5929112 B2 JP S5929112B2 JP 10598980 A JP10598980 A JP 10598980A JP 10598980 A JP10598980 A JP 10598980A JP S5929112 B2 JPS5929112 B2 JP S5929112B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- substrate
- sputter deposition
- introduction hole
- deposition method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 10
- 239000010408 film Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 13
- 238000012544 monitoring process Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 3
- 238000009826 distribution Methods 0.000 description 9
- 230000035699 permeability Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明はスパッタ蒸着法に関するもので、透明なスパッ
タ蒸着膜を均一な膜厚分布で形成することのできる方法
を提供することを目的とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a sputter deposition method, and an object of the present invention is to provide a method capable of forming a transparent sputter deposited film with a uniform thickness distribution.
従来蒸着膜の蒸着中の膜厚モニタは例えば水晶共振子上
に蒸着膜を付着させ、蒸着膜の付着による共振周波数の
変化から述めたり、あるいは被膜を付着すべき基板上に
光を導き、基板面及びこの基板に付着した薄膜表面から
の反射する上記光の相互干渉強度から求めたりしていた
。第1図は従来の光相互干渉を用いたスパッタ蒸着装置
と膜厚モニタ装置の要部を示し、1はターゲット電極、
2はこのターゲット電極1を取り囲む基板ホールダ、6
はスパッタ装置基台を示す。Conventionally, film thickness monitoring during vapor deposition of a vapor-deposited film is performed by, for example, depositing the vapor-deposited film on a crystal resonator and monitoring the change in resonance frequency due to the adhesion of the vapor-deposited film, or by guiding light onto the substrate to which the film is to be deposited. It has been determined from the mutual interference intensity of the light reflected from the substrate surface and the surface of the thin film attached to the substrate. Figure 1 shows the main parts of a conventional sputter deposition apparatus and film thickness monitoring apparatus using mutual optical interference, where 1 indicates a target electrode;
2 is a substrate holder surrounding this target electrode 1;
indicates the sputtering equipment base.
蒸着すべき基板3は基板ホールダ2上に保持する。この
場合、上記基板ホールダ2に光導入孔4を設け、この光
導入孔4を介して光線5を外部から導入し、基板3の表
面に導く、基板3表面から反射した光は再び上記光導入
孔4を通して外部に導出し、この反射光の強度の時間的
変化を蒸着中に観測すると、例えば第2図のごとき振動
特性が得られ、この振動の周期より蒸着膜の蒸着中の膜
厚が得られる。第2図において、nは蒸着膜における光
の屈折率、λは導入光線の光の波長を示す。この種の膜
厚モニタ装置は、透明な蒸着膜の膜厚モニタ用として有
効であるが、導入孔付近では蒸着膜の膜厚分布が大きく
なり、均一な膜厚の被膜を基板上に形成するには導入孔
近くには基板を配置できなく、そのため基板の加工数が
減少するという欠点があつた。本発明は斯かる問題に対
処すべく為されたもので、以下本発明を実施例を示す図
面に基づいて説明する。A substrate 3 to be deposited is held on a substrate holder 2. In this case, a light introduction hole 4 is provided in the substrate holder 2, and a light ray 5 is introduced from the outside through the light introduction hole 4 and guided to the surface of the substrate 3. The light reflected from the surface of the substrate 3 is again introduced into the light. If the reflected light is guided outside through the hole 4 and the temporal change in the intensity of the reflected light is observed during deposition, vibration characteristics as shown in Fig. 2 can be obtained, and the period of this vibration can be used to determine the thickness of the deposited film during deposition. can get. In FIG. 2, n indicates the refractive index of light in the deposited film, and λ indicates the wavelength of the introduced light beam. This type of film thickness monitoring device is effective for monitoring the thickness of transparent deposited films, but the thickness distribution of the deposited film becomes large near the introduction hole, making it difficult to form a film with a uniform thickness on the substrate. The disadvantage of this method is that the substrate cannot be placed near the introduction hole, which reduces the number of substrates to be processed. The present invention has been devised to address this problem, and will be described below with reference to drawings showing embodiments.
即ち本発明は前記第1図に示す装置において、第3図に
示すように基板ホールダ21の光導入孔22の存在によ
る膜厚分布の発生を、該光導入孔22に導電性のガラス
23を取り付けることにより防止し、基板ホールダ21
への基板の充填数を増加させるようにしたものである。
この場合導電性のガラス23として表面が透明導電膜で
被膜された透明ガラス板を用いることができる。又光導
入孔22を通る光線24としてはHe−Neレーザが実
用的である。以上のように光導入孔22に導電性のガラ
ス23を取り付けることにより第4図に示すような特性
を得ることができる。第4図は直径10?の円筒型基板
ホールダに直径10mmの光導入孔を設けたときの光導
入孔付近の膜厚分布を示し、(イ)は空間光導入孔を用
いた従来例、(口)は本発明にかかる導電性ガラスを光
導入孔に挿入して取り付けた場合を示す。光導入孔付近
の膜厚分布は本発明によつて皆無になることが確認され
る。膜厚分布が減少することの理由は主として光導入孔
付近の電界の乱れが導電性ガラスの存在により減少し、
均一なスパツタリング放電が保持されるためと考えられ
る。ところで本発明のスパツタ蒸着法は磁気ヘツド、例
えばビデオ信号用高精度磁気ヘツドの磁気ギヤツプの形
成に有用である。That is, in the apparatus shown in FIG. 1, the present invention prevents the occurrence of film thickness distribution due to the presence of the light introduction hole 22 of the substrate holder 21 as shown in FIG. This can be prevented by attaching the board holder 21
This is to increase the number of substrates packed into the container.
In this case, a transparent glass plate whose surface is coated with a transparent conductive film can be used as the conductive glass 23. Further, as the light beam 24 passing through the light introduction hole 22, a He-Ne laser is practical. By attaching the conductive glass 23 to the light introduction hole 22 as described above, the characteristics shown in FIG. 4 can be obtained. Diameter 10 in figure 4? The film thickness distribution in the vicinity of the light introduction hole is shown when a light introduction hole with a diameter of 10 mm is provided in a cylindrical substrate holder. This shows the case where conductive glass is inserted and attached to the light introduction hole. It is confirmed that the film thickness distribution near the light introduction hole is completely eliminated by the present invention. The reason why the film thickness distribution decreases is mainly because the disturbance of the electric field near the light introduction hole is reduced by the presence of the conductive glass.
This is thought to be because uniform sputtering discharge is maintained. The sputter deposition method of the present invention is useful for forming magnetic gaps in magnetic heads, such as high-precision magnetic heads for video signals.
第5図〜第7図に示す具体実施例について説明する。第
5図において1対の例えばフエライト等の高透磁率磁性
体31,31の少なくとも一方の表面32,32に、第
6図に示すように低透磁率物質のガラス、例えば硼硅酸
ガラスの薄層33,33を厚さ例えば0,3μmで上述
のように膜厚をモニタしながら付着する。この場合、膜
厚精度は50人〜100Å以下にする。これら1対の高
透磁率磁性体31,31同士を上記ガラス薄層33,3
3を介して接合し、これらをスライスして第7図に示す
ような磁気ギヤツプ34を有する磁気コアを形成する。
通常これにコイル35を巻き、磁気ヘツドを形成する。
この場合、磁気ギヤツプ34の幅はほぼガラス薄層33
,33の厚みに相当し、サブミクロン範囲である。又加
工精度は50λ〜100λ以下を要求されるから、膜厚
分布も3%以下を要求される。従来の技術はこれらの精
度を満足した量産技術としては不充分であるが、本発明
のスパツタ蒸着法ではこれが可能になる。以上説明した
ように本発明によれば、光導入孔に導電性の透明ガラス
を挿入するようにしたので、光導入孔付近の電界の乱れ
を除去でき、光導入孔付近の膜厚分布を改善できる。A specific example shown in FIGS. 5 to 7 will be described. In FIG. 5, at least one surface 32, 32 of a pair of high permeability magnetic materials 31, 31, such as ferrite, is coated with a thin film of glass made of a low magnetic permeability material, such as borosilicate glass, as shown in FIG. The layers 33, 33 are deposited to a thickness of, for example, 0.3 μm, monitoring the film thickness as described above. In this case, the film thickness accuracy should be 50 to 100 Å or less. These pair of high magnetic permeability magnetic bodies 31, 31 are connected to the glass thin layers 33, 3.
3 and sliced to form a magnetic core having a magnetic gap 34 as shown in FIG.
Usually, a coil 35 is wound around this to form a magnetic head.
In this case, the width of the magnetic gap 34 is approximately equal to the width of the thin glass layer 33.
, 33, and is in the submicron range. Further, since the processing accuracy is required to be 50λ to 100λ or less, the film thickness distribution is also required to be 3% or less. Although conventional techniques are insufficient for mass production that satisfies these precisions, the sputter deposition method of the present invention makes this possible. As explained above, according to the present invention, since conductive transparent glass is inserted into the light introduction hole, disturbances in the electric field near the light introduction hole can be removed, and the film thickness distribution near the light introduction hole can be improved. can.
したがつて、透明なスパツタ蒸着膜を極めて高精度に均
一な膜厚分布で形成でき、その工業的利用価値は極めて
大である。Therefore, a transparent sputter-deposited film can be formed with extremely high precision and a uniform thickness distribution, and its industrial utility value is extremely large.
第1図は従来例を示す断面図、第2図は従来例の特性図
、第3図は本発明の基本実施例を示す要部断面図、第4
図は本発明の特性図、第5図〜第7図は本発明の具体実
施例における磁気ヘツドの製造順序を示す説明図である
。
21・・・・・・基本ホールダ、22・・・・・・光導
入孔、23・・・・・・導電性ガラス、24・・・・・
・光線、31・・・・・・高透磁率磁性体、32・・・
・・・表面、33・・・・・・ガラス薄層、34・・・
・・・磁気ギヤツプ。Fig. 1 is a sectional view showing a conventional example, Fig. 2 is a characteristic diagram of the conventional example, Fig. 3 is a sectional view of main parts showing a basic embodiment of the present invention, and Fig. 4
The figure is a characteristic diagram of the present invention, and FIGS. 5 to 7 are explanatory diagrams showing the manufacturing order of a magnetic head in a specific embodiment of the present invention. 21... Basic holder, 22... Light introduction hole, 23... Conductive glass, 24...
・Light ray, 31... High permeability magnetic material, 32...
...Surface, 33...Glass thin layer, 34...
...magnetic gap.
Claims (1)
を取り囲み内面に基板が配置される基板ホールダとを用
いるスパッタ蒸着法において、前記基板ホールダに光導
入孔を設け、前記光導入孔に導電性の透明ガラスを挿入
して設け、スパッタ蒸着中に前記光導入孔から導入した
光を前記基板表面に導き、前記基板表面及びこの基板に
付着した薄膜表面から反射する前記光の相互干渉強度か
らスパッタ蒸着膜の膜厚をモニタすることを特徴とする
スパッタ蒸着法。 2 膜厚モニタに用いる光としてHe−Neレーザを用
いることを特徴とする特許請求の範囲第1項記載のスパ
ッタ蒸着法。 3 導電性の透明ガラスとして表面を透明導電膜で被覆
された透明ガラス板を用いることを特徴とする特許請求
の範囲第1項記載のスパッタ蒸着法。[Scope of Claims] 1 In a sputter deposition method using at least a target electrode and a substrate holder surrounding the target electrode and having a substrate disposed on the inner surface, the substrate holder is provided with a light introduction hole, and the light introduction hole is electrically conductive. The light introduced from the light introduction hole during sputter deposition is guided to the surface of the substrate, and the mutual interference intensity of the light reflected from the surface of the substrate and the surface of the thin film attached to this substrate is determined. A sputter deposition method characterized by monitoring the thickness of a sputter deposited film. 2. The sputter deposition method according to claim 1, characterized in that a He-Ne laser is used as the light used to monitor the film thickness. 3. The sputter deposition method according to claim 1, wherein a transparent glass plate whose surface is coated with a transparent conductive film is used as the conductive transparent glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10598980A JPS5929112B2 (en) | 1980-07-31 | 1980-07-31 | sputter deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10598980A JPS5929112B2 (en) | 1980-07-31 | 1980-07-31 | sputter deposition method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59010581A Division JPS59139125A (en) | 1984-01-23 | 1984-01-23 | Formation of magnetic gap |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5732369A JPS5732369A (en) | 1982-02-22 |
| JPS5929112B2 true JPS5929112B2 (en) | 1984-07-18 |
Family
ID=14422131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10598980A Expired JPS5929112B2 (en) | 1980-07-31 | 1980-07-31 | sputter deposition method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5929112B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS617914U (en) * | 1984-06-20 | 1986-01-18 | ヤンマー農機株式会社 | Fertilizing seeding device in direct sowing machine |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61294618A (en) * | 1985-06-21 | 1986-12-25 | Toshiba Corp | Production of magnetic head |
-
1980
- 1980-07-31 JP JP10598980A patent/JPS5929112B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS617914U (en) * | 1984-06-20 | 1986-01-18 | ヤンマー農機株式会社 | Fertilizing seeding device in direct sowing machine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5732369A (en) | 1982-02-22 |
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