JPS5734329A - Manufacture of simiconductor device - Google Patents

Manufacture of simiconductor device

Info

Publication number
JPS5734329A
JPS5734329A JP10958480A JP10958480A JPS5734329A JP S5734329 A JPS5734329 A JP S5734329A JP 10958480 A JP10958480 A JP 10958480A JP 10958480 A JP10958480 A JP 10958480A JP S5734329 A JPS5734329 A JP S5734329A
Authority
JP
Japan
Prior art keywords
type gaas
gaalas
type
temperature
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10958480A
Other languages
Japanese (ja)
Inventor
Yukihiro Sasaya
Shinichi Iguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP10958480A priority Critical patent/JPS5734329A/en
Publication of JPS5734329A publication Critical patent/JPS5734329A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To simply obtain a GaAlAs/CaAs solar battery, by a method wherein temperature is raised under the condition that a raw material solution and substrate crystal are contacted and temperature rise width and contacting hold time are controlled to independently control each layer thichness. CONSTITUTION:N type GaAs of Si dope applied glassy surface finish to a (100) plane is contacted with a raw material solution dissolved Ga, Al, monocrystal GaAs, Zn at a predetermined ratio at T1 deg.C. Temperature is increased by DELTAT during time tc and a substrate is isolated at a predetermined temperature T2 deg.C for cooling. Zn is diffused into the N type GaAs substrate during contact to simultaneously form P type GaAs and P type GaAlAs. With temperature rise width and contacting hold time controlled by contacting the raw material and the substrate crystal, each thickness of P type GaAs and P layer GaAlAs can independently be controlled, thereby, a solar battery of P type GaAlAs/P type GaAs/N type GaAs structure can be obtained without losing simplicity by using a single solution and the solar battery of high efficiency is obtained.
JP10958480A 1980-08-09 1980-08-09 Manufacture of simiconductor device Pending JPS5734329A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10958480A JPS5734329A (en) 1980-08-09 1980-08-09 Manufacture of simiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10958480A JPS5734329A (en) 1980-08-09 1980-08-09 Manufacture of simiconductor device

Publications (1)

Publication Number Publication Date
JPS5734329A true JPS5734329A (en) 1982-02-24

Family

ID=14513965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10958480A Pending JPS5734329A (en) 1980-08-09 1980-08-09 Manufacture of simiconductor device

Country Status (1)

Country Link
JP (1) JPS5734329A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442512A (en) * 1987-08-13 1989-02-14 Uralsky Inst Chernykh Metall Steel making method using sponge iron
JPH05326995A (en) * 1992-05-20 1993-12-10 Hitachi Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442512A (en) * 1987-08-13 1989-02-14 Uralsky Inst Chernykh Metall Steel making method using sponge iron
JPH05326995A (en) * 1992-05-20 1993-12-10 Hitachi Ltd Semiconductor device

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