JPS5688366A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5688366A
JPS5688366A JP16659479A JP16659479A JPS5688366A JP S5688366 A JPS5688366 A JP S5688366A JP 16659479 A JP16659479 A JP 16659479A JP 16659479 A JP16659479 A JP 16659479A JP S5688366 A JPS5688366 A JP S5688366A
Authority
JP
Japan
Prior art keywords
layer
silicide
polycrystalline
substrate
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16659479A
Other languages
Japanese (ja)
Inventor
Masao Taguchi
Nobuo Toyokura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16659479A priority Critical patent/JPS5688366A/en
Publication of JPS5688366A publication Critical patent/JPS5688366A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain an MIS transistor having no signal delay by forming the gate electrode thereof in two-layer architecture of metallic silicide underlain with a polycrystalline Si layer and forming a wire on a gate dielectric film of a single metallic silicide layer. CONSTITUTION:A thick field SiO2 film 4 is formed on the periphery of a p type Si substrate 2, and n<+> type source and drain regions 6 and 8 are diffused in the substrate 2 surrounded thereby. Then, a gate SiO2 film 10 is formed on the surface of the substrate 2 exposed between the regions 6 and 8, and when a gate electrode is mounted thereon, a laminate of a polycrystalline Si layer 12 and an Mo silicide layer 14 are formed as a gate electrode with the layer 12 underlaid. When a wiring layer (not shown) is formed on the insulating film, single Mo silicide layer is used. Thus, it can overcome the demerits without losing the advantages of both the polycrystalline Si and the Mo silicide and can accelerate the operation of the device.
JP16659479A 1979-12-21 1979-12-21 Semiconductor device Pending JPS5688366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16659479A JPS5688366A (en) 1979-12-21 1979-12-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16659479A JPS5688366A (en) 1979-12-21 1979-12-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5688366A true JPS5688366A (en) 1981-07-17

Family

ID=15834171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16659479A Pending JPS5688366A (en) 1979-12-21 1979-12-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5688366A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62139343A (en) * 1985-12-13 1987-06-23 Nec Corp Manufacture of semiconductor device
US5223456A (en) * 1990-05-02 1993-06-29 Quality Semiconductor Inc. High density local interconnect in an integrated circit using metal silicide
US5254874A (en) * 1990-05-02 1993-10-19 Quality Semiconductor Inc. High density local interconnect in a semiconductor circuit using metal silicide

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62139343A (en) * 1985-12-13 1987-06-23 Nec Corp Manufacture of semiconductor device
US5223456A (en) * 1990-05-02 1993-06-29 Quality Semiconductor Inc. High density local interconnect in an integrated circit using metal silicide
US5254874A (en) * 1990-05-02 1993-10-19 Quality Semiconductor Inc. High density local interconnect in a semiconductor circuit using metal silicide

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