JPS5739171A - Film thickness monitoring apparatus in vapor deposition apparatus - Google Patents

Film thickness monitoring apparatus in vapor deposition apparatus

Info

Publication number
JPS5739171A
JPS5739171A JP11346780A JP11346780A JPS5739171A JP S5739171 A JPS5739171 A JP S5739171A JP 11346780 A JP11346780 A JP 11346780A JP 11346780 A JP11346780 A JP 11346780A JP S5739171 A JPS5739171 A JP S5739171A
Authority
JP
Japan
Prior art keywords
vapor deposition
shutter
film thickness
monitor
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11346780A
Other languages
Japanese (ja)
Other versions
JPS643946B2 (en
Inventor
Katsuya Okumura
Toshiaki Fujioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Ulvac Inc
Original Assignee
Toshiba Corp
Ulvac Inc
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Ulvac Inc, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11346780A priority Critical patent/JPS5739171A/en
Publication of JPS5739171A publication Critical patent/JPS5739171A/en
Publication of JPS643946B2 publication Critical patent/JPS643946B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/545Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To extend the life of a monitoring apparatus and to form a uniform film thickness by a method wherein a crystal oscillator type monitor for controlling a vapor deposition film thickness and a timer for setting a vapor deposition time in a vapor deposition apparatus to CPU and the film thickness is controlled by cooperative driving thereof. CONSTITUTION:In the vapor deposition apparatus 1, a crystal oscillator type monitor 6 monitoring a vapor deposition speed is connected to CPU8 and said CPU8 controls an operation time of a timer 9 corresponding to the vapor deposition speed from the monitor 6 to set an opening and closing operation time of a shutter 10 above a vapor deposition source 2 as well as to control the opening and the closing of said shutter 7. That is, at a certain time of vapor deposition, the shutter 7 is opened to confirm a vapor deposition speed by the monitor 6 and, thereafter, the shutter 7 is closed so as to prevent entrance of vapor deposition particle. The vapor deposition speed confirmed by the monitor 6 is applied to the CPU8 to calculate a vapor deposition time and, corresponding to this time, the timer 9 is operated to open and close the shutter 10 and, thereby, a thickness of a vapor deposition film against a substrate plate 5 is controlled.
JP11346780A 1980-08-20 1980-08-20 Film thickness monitoring apparatus in vapor deposition apparatus Granted JPS5739171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11346780A JPS5739171A (en) 1980-08-20 1980-08-20 Film thickness monitoring apparatus in vapor deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11346780A JPS5739171A (en) 1980-08-20 1980-08-20 Film thickness monitoring apparatus in vapor deposition apparatus

Publications (2)

Publication Number Publication Date
JPS5739171A true JPS5739171A (en) 1982-03-04
JPS643946B2 JPS643946B2 (en) 1989-01-24

Family

ID=14612979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11346780A Granted JPS5739171A (en) 1980-08-20 1980-08-20 Film thickness monitoring apparatus in vapor deposition apparatus

Country Status (1)

Country Link
JP (1) JPS5739171A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153208A (en) * 1981-03-17 1982-09-21 Mitsubishi Electric Corp Chemical vapor growth device
JPS58174804A (en) * 1982-04-07 1983-10-13 Matsushita Electric Ind Co Ltd Film thickness measuring device
KR100600880B1 (en) 2004-10-05 2006-07-18 삼성에스디아이 주식회사 Vacuum evaporator
KR100684739B1 (en) 2005-11-22 2007-02-20 삼성에스디아이 주식회사 Organic material deposition apparatus
KR100709265B1 (en) * 2005-11-22 2007-04-19 삼성에스디아이 주식회사 Organic material deposition apparatus and deposition method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153208A (en) * 1981-03-17 1982-09-21 Mitsubishi Electric Corp Chemical vapor growth device
JPS58174804A (en) * 1982-04-07 1983-10-13 Matsushita Electric Ind Co Ltd Film thickness measuring device
KR100600880B1 (en) 2004-10-05 2006-07-18 삼성에스디아이 주식회사 Vacuum evaporator
KR100684739B1 (en) 2005-11-22 2007-02-20 삼성에스디아이 주식회사 Organic material deposition apparatus
KR100709265B1 (en) * 2005-11-22 2007-04-19 삼성에스디아이 주식회사 Organic material deposition apparatus and deposition method

Also Published As

Publication number Publication date
JPS643946B2 (en) 1989-01-24

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