JPS648265A - Method for controlling evaporation rate of vacuum deposition device - Google Patents

Method for controlling evaporation rate of vacuum deposition device

Info

Publication number
JPS648265A
JPS648265A JP16085887A JP16085887A JPS648265A JP S648265 A JPS648265 A JP S648265A JP 16085887 A JP16085887 A JP 16085887A JP 16085887 A JP16085887 A JP 16085887A JP S648265 A JPS648265 A JP S648265A
Authority
JP
Japan
Prior art keywords
evaporation
opening degree
vapor
heater
heater power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16085887A
Other languages
Japanese (ja)
Inventor
Kuniaki Tauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP16085887A priority Critical patent/JPS648265A/en
Publication of JPS648265A publication Critical patent/JPS648265A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To control an evaporation rate with high responsiveness and to execute good vapor deposition on a strip by detecting a shutter opening degree, controlling the opening degree and controlling the heater power of an evaporation vessel according to the opening degree. CONSTITUTION:A metal bath 1 in the evaporation bath vessel 2 is heated by a heater 4 and generated metal vapor 3 is introduced through a shutter 8 installed at a vapor flow port 5 into a channel 6 where the vapor is deposited by evaporation on the strip 7 traveling on a winding roll 11. The opening control of the above-mentioned shutter 8 is controlled by a shutter opening degree controller 15 according to the thickness of the vapor deposited film on the strip 7 by which the evaporation of the metal vapor 3 is instantaneously controller with the above-mentioned continuous vacuum deposition device. The heater power A is controlled in accordance with the target value C of the evaporation rate to obtain a heat balance. The shutter opening degree is detected at this time and the above-mentioned heater power A is applied to the heat if the deviation between the detected value F and the prescribed value E is within a permissible range. The heater capacity, i.e., the min heater power or the max. heater power subjected to a smoothing treatment is applied to the heater when the above- mentioned deviation exceeds the permissible range.
JP16085887A 1987-06-30 1987-06-30 Method for controlling evaporation rate of vacuum deposition device Pending JPS648265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16085887A JPS648265A (en) 1987-06-30 1987-06-30 Method for controlling evaporation rate of vacuum deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16085887A JPS648265A (en) 1987-06-30 1987-06-30 Method for controlling evaporation rate of vacuum deposition device

Publications (1)

Publication Number Publication Date
JPS648265A true JPS648265A (en) 1989-01-12

Family

ID=15723902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16085887A Pending JPS648265A (en) 1987-06-30 1987-06-30 Method for controlling evaporation rate of vacuum deposition device

Country Status (1)

Country Link
JP (1) JPS648265A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6465257A (en) * 1987-09-07 1989-03-10 Mitsubishi Heavy Ind Ltd Method for controlling amount of evaporation in vacuum deposition device
KR100392070B1 (en) * 2000-11-27 2003-07-23 주식회사 미래엔지니어링 A waste-water Treatment system using titanium dioxide as catalyst which immobilized with Sol-gel method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251273A (en) * 1984-05-28 1985-12-11 Mitsubishi Heavy Ind Ltd Method for controlling extent of evaporation in vacuum depositing apparatus
JPS62267471A (en) * 1986-05-16 1987-11-20 Mitsubishi Heavy Ind Ltd Method for controlling extent of evaporation in vacuum deposition apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251273A (en) * 1984-05-28 1985-12-11 Mitsubishi Heavy Ind Ltd Method for controlling extent of evaporation in vacuum depositing apparatus
JPS62267471A (en) * 1986-05-16 1987-11-20 Mitsubishi Heavy Ind Ltd Method for controlling extent of evaporation in vacuum deposition apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6465257A (en) * 1987-09-07 1989-03-10 Mitsubishi Heavy Ind Ltd Method for controlling amount of evaporation in vacuum deposition device
KR100392070B1 (en) * 2000-11-27 2003-07-23 주식회사 미래엔지니어링 A waste-water Treatment system using titanium dioxide as catalyst which immobilized with Sol-gel method

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