JPS5741640A - Photomask and its production, and pattern transfer method using said photomask - Google Patents

Photomask and its production, and pattern transfer method using said photomask

Info

Publication number
JPS5741640A
JPS5741640A JP11731180A JP11731180A JPS5741640A JP S5741640 A JPS5741640 A JP S5741640A JP 11731180 A JP11731180 A JP 11731180A JP 11731180 A JP11731180 A JP 11731180A JP S5741640 A JPS5741640 A JP S5741640A
Authority
JP
Japan
Prior art keywords
electron beam
photomask
film
thicknesses
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11731180A
Other languages
Japanese (ja)
Other versions
JPS627536B2 (en
Inventor
Tatsuya Ikeuchi
Tomihiro Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP11731180A priority Critical patent/JPS5741640A/en
Publication of JPS5741640A publication Critical patent/JPS5741640A/en
Publication of JPS627536B2 publication Critical patent/JPS627536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To permit simultaneous formation of two or more colored transparent thin film patterns of different thicknesses on one sheet of photomask by combining an electron beam irradiating device and silicon type inorg. resist. CONSTITUTION:A transparent or semitransparent conductive layer is provided on a transparent substrate, and silicon type inorg. resist (a mixture of silicon oxide with silicon in a ratio of <=5 to 1 by weight) is provided thereon 1mum thickness. Since the inorg. resist film has the property of leaving films of various thicknesses in accordance with electron beam irradiation quantity, two or more patterns having arbitrary film thicknesses of different thicknesses can be formed by using a vector such type electron beam irradiating device which permits arbitrary changing of irradiation positions and electron beam diameters. The optical density to utraviolet rays is proportional to said film thicknesses. Photoresist of negative or positive type having remaining film rate characteristics is provided on the work and the above-mentioned patterns are transferred simultaneously.
JP11731180A 1980-08-26 1980-08-26 Photomask and its production, and pattern transfer method using said photomask Granted JPS5741640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11731180A JPS5741640A (en) 1980-08-26 1980-08-26 Photomask and its production, and pattern transfer method using said photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11731180A JPS5741640A (en) 1980-08-26 1980-08-26 Photomask and its production, and pattern transfer method using said photomask

Publications (2)

Publication Number Publication Date
JPS5741640A true JPS5741640A (en) 1982-03-08
JPS627536B2 JPS627536B2 (en) 1987-02-18

Family

ID=14708603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11731180A Granted JPS5741640A (en) 1980-08-26 1980-08-26 Photomask and its production, and pattern transfer method using said photomask

Country Status (1)

Country Link
JP (1) JPS5741640A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2589593A1 (en) * 1985-08-09 1987-05-07 Pichot Michel Lithography mask, process for manufacturing this mask and process for manufacturing an integrated circuit with the aid of the said mask
FR2606210A1 (en) * 1986-10-30 1988-05-06 Devine Roderick Process for the manufacture of a photolithogravure (photogravure) mask and mask obtained

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2589593A1 (en) * 1985-08-09 1987-05-07 Pichot Michel Lithography mask, process for manufacturing this mask and process for manufacturing an integrated circuit with the aid of the said mask
FR2606210A1 (en) * 1986-10-30 1988-05-06 Devine Roderick Process for the manufacture of a photolithogravure (photogravure) mask and mask obtained

Also Published As

Publication number Publication date
JPS627536B2 (en) 1987-02-18

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