JPS574173A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS574173A
JPS574173A JP7859680A JP7859680A JPS574173A JP S574173 A JPS574173 A JP S574173A JP 7859680 A JP7859680 A JP 7859680A JP 7859680 A JP7859680 A JP 7859680A JP S574173 A JPS574173 A JP S574173A
Authority
JP
Japan
Prior art keywords
regions
type
junctions
receiving light
boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7859680A
Other languages
Japanese (ja)
Inventor
Toru Kondo
Yasuaki Terui
Takamichi Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7859680A priority Critical patent/JPS574173A/en
Publication of JPS574173A publication Critical patent/JPS574173A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To prevent the generation of a blooming by forming resistance regions with one conduction type to a region existing between adjacent P-N junctions for receiving light and regions existing among the P-N junctions for receiving light and the storing reading circuits. CONSTITUTION:A P type semiconductor layer with boron concentration lower than a P<+> type monocrystal semiconductor substrate 26 is formed on the substrate 26 in Si containing boron in high concentration according to an epitaxial method. Boron is diffused in high concentration, and P<+> type low resistance regions 28 reaching the substrate 26 are made up, thus forming divided island-shaped regions 27, 29. The surface is coated with a Si nitride film, the nitride films of sections 31 are removed, a Si dioxide film 30 is built up and a gate electrode 23 in polycrystal Si is made up on the film 30. P ions are injected, and N type regions 20, 22, 24 are formed. Wiring 21 connecting the regions 20, 22 and wiring 25 reading signals are made up by polycrystal Si or metal with low resistance. Accordingly, the efficiency of conversion of the P-N junctions for receiving light is increased, and the generation of the blooming can be prevented.
JP7859680A 1980-06-10 1980-06-10 Semiconductor device Pending JPS574173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7859680A JPS574173A (en) 1980-06-10 1980-06-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7859680A JPS574173A (en) 1980-06-10 1980-06-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS574173A true JPS574173A (en) 1982-01-09

Family

ID=13666279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7859680A Pending JPS574173A (en) 1980-06-10 1980-06-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS574173A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60158679A (en) * 1984-01-28 1985-08-20 Rohm Co Ltd Light receiving element
US4794443A (en) * 1984-05-28 1988-12-27 Canon Kabushiki Kaisha Semiconductor device and process for producing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60158679A (en) * 1984-01-28 1985-08-20 Rohm Co Ltd Light receiving element
US4794443A (en) * 1984-05-28 1988-12-27 Canon Kabushiki Kaisha Semiconductor device and process for producing same

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