JPS574183A - Metallic thin strip for installing semiconductor light-emitting element - Google Patents

Metallic thin strip for installing semiconductor light-emitting element

Info

Publication number
JPS574183A
JPS574183A JP7816080A JP7816080A JPS574183A JP S574183 A JPS574183 A JP S574183A JP 7816080 A JP7816080 A JP 7816080A JP 7816080 A JP7816080 A JP 7816080A JP S574183 A JPS574183 A JP S574183A
Authority
JP
Japan
Prior art keywords
layer
emitting element
semiconductor light
constitution
thin strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7816080A
Other languages
Japanese (ja)
Inventor
Ikuo Fukuda
Kiyoshi Usui
Hiroshi Yamamoto
Masamichi Shindo
Masanobu Fujisaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7816080A priority Critical patent/JPS574183A/en
Publication of JPS574183A publication Critical patent/JPS574183A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)

Abstract

PURPOSE:To prevent the lowering of luminous output, and to reduce cost by a method wherein a metallic layer into which Cu is difficult to diffuse is stacked on a Cu layer at a tip of a lead wire for installing the semiconductor light-emitting element, and the exposed surface is covered with an Ag layer. CONSTITUTION:The whole surface of an Fe raw material 21 is covered with the Cu layer 22, and an Ni plating layer 23 is formed in a concave section 4, into which an LED pellet is mounted, at a nose. The layer 23 is made up where upper than a necessary section (an alternate long and short broken line) because the surface of a plating liquid shakes practically. The Ag plating layer 24 is formed so as to cover the exposed surface of the Ni layer 23. According to this constitution, the expensive Ag layer 24 is thinned and Cu ions precipitating on the surface can be decreased up to the one seventh or one tenth of conventional constitution in the metallic thin strip, and cost can be reduced.
JP7816080A 1980-06-10 1980-06-10 Metallic thin strip for installing semiconductor light-emitting element Pending JPS574183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7816080A JPS574183A (en) 1980-06-10 1980-06-10 Metallic thin strip for installing semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7816080A JPS574183A (en) 1980-06-10 1980-06-10 Metallic thin strip for installing semiconductor light-emitting element

Publications (1)

Publication Number Publication Date
JPS574183A true JPS574183A (en) 1982-01-09

Family

ID=13654164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7816080A Pending JPS574183A (en) 1980-06-10 1980-06-10 Metallic thin strip for installing semiconductor light-emitting element

Country Status (1)

Country Link
JP (1) JPS574183A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111959U (en) * 1982-01-21 1983-07-30 シャープ株式会社 semiconductor equipment
JPS58111958U (en) * 1982-01-21 1983-07-30 シャープ株式会社 Lead frame for semiconductor devices
JPH02110982A (en) * 1989-09-08 1990-04-24 Sharp Corp Manufacture of semiconductor device
JP2001230453A (en) * 1999-12-08 2001-08-24 Nichia Chem Ind Ltd LED lamp and manufacturing method thereof
JP2002094130A (en) * 1999-01-05 2002-03-29 Nichia Chem Ind Ltd Light emitting diode, method of manufacturing the same, and display device using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54153573A (en) * 1978-05-25 1979-12-03 Mitsubishi Electric Corp Manufacture for compound semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54153573A (en) * 1978-05-25 1979-12-03 Mitsubishi Electric Corp Manufacture for compound semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111959U (en) * 1982-01-21 1983-07-30 シャープ株式会社 semiconductor equipment
JPS58111958U (en) * 1982-01-21 1983-07-30 シャープ株式会社 Lead frame for semiconductor devices
JPH02110982A (en) * 1989-09-08 1990-04-24 Sharp Corp Manufacture of semiconductor device
JP2002094130A (en) * 1999-01-05 2002-03-29 Nichia Chem Ind Ltd Light emitting diode, method of manufacturing the same, and display device using the same
JP2001230453A (en) * 1999-12-08 2001-08-24 Nichia Chem Ind Ltd LED lamp and manufacturing method thereof

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