JPS5743415A - Manufacture of compound semiconductor device - Google Patents

Manufacture of compound semiconductor device

Info

Publication number
JPS5743415A
JPS5743415A JP55118304A JP11830480A JPS5743415A JP S5743415 A JPS5743415 A JP S5743415A JP 55118304 A JP55118304 A JP 55118304A JP 11830480 A JP11830480 A JP 11830480A JP S5743415 A JPS5743415 A JP S5743415A
Authority
JP
Japan
Prior art keywords
layer
ion injection
boundary
forming
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55118304A
Other languages
Japanese (ja)
Inventor
Mitsugi Higashiura
Yasuhisa Oana
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55118304A priority Critical patent/JPS5743415A/en
Publication of JPS5743415A publication Critical patent/JPS5743415A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/206—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group III-V semiconductors

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To sharpen the electron density at the end of an operation layer by injecting electrically inert ionic species in the operation layer when forming the operation layer by an ion injection method on a GaAs substrate. CONSTITUTION:Si ions of N type impurity is injected by an ion injection method on the surface of a GaAs substrate 21, thereby forming an Si ion injection layer 22. Then, As ions are injected from above the layer 22, thereby forming an As ion injection layer 24. when it is then heat treated, the layer 24 is epitaxially gradually recovered from the boundary 25, and is thus crystallized. As the layer 24 is recovered, Cr contained in the substrate 21 is gettered to the boundary 25, thereby increasing the Cr density in the vicinity of the boundary 25.
JP55118304A 1980-08-29 1980-08-29 Manufacture of compound semiconductor device Pending JPS5743415A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55118304A JPS5743415A (en) 1980-08-29 1980-08-29 Manufacture of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55118304A JPS5743415A (en) 1980-08-29 1980-08-29 Manufacture of compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS5743415A true JPS5743415A (en) 1982-03-11

Family

ID=14733362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55118304A Pending JPS5743415A (en) 1980-08-29 1980-08-29 Manufacture of compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5743415A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196370A (en) * 1990-11-08 1993-03-23 Matsushita Electronics Corporation Method of manufacturing an arsenic-including compound semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196370A (en) * 1990-11-08 1993-03-23 Matsushita Electronics Corporation Method of manufacturing an arsenic-including compound semiconductor device

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