JPS5654073A - Manufacture of junction field-effect transistor - Google Patents

Manufacture of junction field-effect transistor

Info

Publication number
JPS5654073A
JPS5654073A JP12895079A JP12895079A JPS5654073A JP S5654073 A JPS5654073 A JP S5654073A JP 12895079 A JP12895079 A JP 12895079A JP 12895079 A JP12895079 A JP 12895079A JP S5654073 A JPS5654073 A JP S5654073A
Authority
JP
Japan
Prior art keywords
type
region
layer
oxidized film
gate region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12895079A
Other languages
Japanese (ja)
Inventor
Yuzuru Fujita
Ryoichi Fukuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12895079A priority Critical patent/JPS5654073A/en
Publication of JPS5654073A publication Critical patent/JPS5654073A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a deep gate region with a highly concentrated impurities in good reproducibility by a method wherein a gate region of J-FET is formed using a large current ion injecting device. CONSTITUTION:An N<-> type layer 2 is made epitaxial growth on P<-> type Si substrate 1, and injected with P type impurity ions to form P<-> type region 3, which comes into the substrate 1, around the layer 2 with an oxidized film 8 formed on the surface as a mask, and to separate the layer 2 in insular. At this time, then, an opening is formed in a prescribed region of an oxidized film 9 which is formed on the film 8 integrally, and an ion-injection region is formed in the layer 2 exposed by means of a large current ion injecter in which a hot cathode is used. Thereafter, it is treated by annealing at temperatures of 900-1,100 deg.C to obtain a P<+> type gate region 10, the oxidized film 9 on the surface being renewed to 11, and opening being formed, and an N<+> type source contact 5 and a drain contact 6 respectively are diffusion-formed in the layers 2 on both sides of the region 10. With such a construction, a controlling operation can easily be performed and in addition, the scattering of the source-drain currents can also be restrained within + or -15%.
JP12895079A 1979-10-08 1979-10-08 Manufacture of junction field-effect transistor Pending JPS5654073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12895079A JPS5654073A (en) 1979-10-08 1979-10-08 Manufacture of junction field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12895079A JPS5654073A (en) 1979-10-08 1979-10-08 Manufacture of junction field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5654073A true JPS5654073A (en) 1981-05-13

Family

ID=14997409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12895079A Pending JPS5654073A (en) 1979-10-08 1979-10-08 Manufacture of junction field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5654073A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021392A (en) * 1983-07-14 1985-02-02 Toyo Kohan Co Ltd Continuous partial plating roll

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021392A (en) * 1983-07-14 1985-02-02 Toyo Kohan Co Ltd Continuous partial plating roll

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