JPS5745920A - Forming method for semiconductor single crystal by energy beam emission - Google Patents

Forming method for semiconductor single crystal by energy beam emission

Info

Publication number
JPS5745920A
JPS5745920A JP55121563A JP12156380A JPS5745920A JP S5745920 A JPS5745920 A JP S5745920A JP 55121563 A JP55121563 A JP 55121563A JP 12156380 A JP12156380 A JP 12156380A JP S5745920 A JPS5745920 A JP S5745920A
Authority
JP
Japan
Prior art keywords
layer
single crystal
single crystalline
energy beam
heat radiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55121563A
Other languages
Japanese (ja)
Other versions
JPH0131288B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55121563A priority Critical patent/JPS5745920A/en
Publication of JPS5745920A publication Critical patent/JPS5745920A/en
Publication of JPH0131288B2 publication Critical patent/JPH0131288B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a uniform single crystal by growing a non-single crystalline layer through an insulating layer having an opening on a semiconductor single crystalline substrate, emitting an energy beam to melt it and to solidify it, and varying the emitting intensity corresponding to the heat radiating characteristic of a region to be emitted when the layer is transferred to single crystal. CONSTITUTION:An intermediate layer 2 of an insulating layer having openings at the scribing line regions 4 and isolation regions 5 is formed on a semiconductor single crystalline substrate 1, and a non-single crystalline layer 3 is formed on the overall surface including the layer 2. Then, an energy beam is emitted thereto to melt the layer 3, to then solidify it, thereby forming a single crystal, but its heat radiating characteristics become different due to the existence of the openings, with the result that the solidified single crystalline layer does not become uniform. Thus, when the layer 2 is scanned, the energy intensity is reduced, and is increased at the opening, or the scanning speed is varied, thereby equalizing the single crystal thus converted due to the difference in the heat radiating characteristics.
JP55121563A 1980-09-02 1980-09-02 Forming method for semiconductor single crystal by energy beam emission Granted JPS5745920A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55121563A JPS5745920A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal by energy beam emission

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55121563A JPS5745920A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal by energy beam emission

Publications (2)

Publication Number Publication Date
JPS5745920A true JPS5745920A (en) 1982-03-16
JPH0131288B2 JPH0131288B2 (en) 1989-06-26

Family

ID=14814324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55121563A Granted JPS5745920A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal by energy beam emission

Country Status (1)

Country Link
JP (1) JPS5745920A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121825A (en) * 1982-12-28 1984-07-14 Agency Of Ind Science & Technol Fabrication of semiconductor thin film
JPS59208820A (en) * 1983-05-13 1984-11-27 Seiko Epson Corp Manufacture of semiconductor device
JPS60246621A (en) * 1984-05-22 1985-12-06 Agency Of Ind Science & Technol Manufacture of semiconductor crystal layer
JPS614900A (en) * 1984-06-18 1986-01-10 Shoketsu Kinzoku Kogyo Co Ltd Ejector device
JPS614899A (en) * 1984-06-18 1986-01-10 Shoketsu Kinzoku Kogyo Co Ltd Ejector device
JPS63265421A (en) * 1987-04-23 1988-11-01 Agency Of Ind Science & Technol Manufacture of semiconductor single crystal layer
JPH0276220A (en) * 1988-09-12 1990-03-15 Agency Of Ind Science & Technol Formation of semiconductor single crustal thin film
US5401683A (en) * 1987-12-04 1995-03-28 Agency Of Industrial Science And Technology Method of manufacturing a multi-layered semiconductor substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.APPL.PHYS=1966 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121825A (en) * 1982-12-28 1984-07-14 Agency Of Ind Science & Technol Fabrication of semiconductor thin film
JPS59208820A (en) * 1983-05-13 1984-11-27 Seiko Epson Corp Manufacture of semiconductor device
JPS60246621A (en) * 1984-05-22 1985-12-06 Agency Of Ind Science & Technol Manufacture of semiconductor crystal layer
JPS614900A (en) * 1984-06-18 1986-01-10 Shoketsu Kinzoku Kogyo Co Ltd Ejector device
JPS614899A (en) * 1984-06-18 1986-01-10 Shoketsu Kinzoku Kogyo Co Ltd Ejector device
JPS63265421A (en) * 1987-04-23 1988-11-01 Agency Of Ind Science & Technol Manufacture of semiconductor single crystal layer
US5401683A (en) * 1987-12-04 1995-03-28 Agency Of Industrial Science And Technology Method of manufacturing a multi-layered semiconductor substrate
JPH0276220A (en) * 1988-09-12 1990-03-15 Agency Of Ind Science & Technol Formation of semiconductor single crustal thin film

Also Published As

Publication number Publication date
JPH0131288B2 (en) 1989-06-26

Similar Documents

Publication Publication Date Title
JPS577924A (en) Semiconductor device and manufacture thereof
JPS571225A (en) Manufacture of semiconductor device
JPS55124292A (en) Semiconductor laser device and method of fabricating the same
JPS575327A (en) Manufacture of semiconductor device
JPS56126914A (en) Manufacture of semiconductor device
JPS57162433A (en) Scanning method for energy beam
JPS5797620A (en) Improvement of crystallinity of semiconductor film
JPS5416992A (en) Light emitting diode
JPS5749225A (en) Single-crystallizing method for non-single crystalline semiconductor layer
JPS5749224A (en) Semiconductor device
JPS56126915A (en) Manufacture of semiconductor device
JPS5678154A (en) Manufacture of semiconductor device
Kachurin Epitaxial Crystallization of GaP Films on Si by Nanosecond Laser Pulses
JPS546767A (en) Manufacture of semiconductor device
JPS5745922A (en) Forming method for semiconductor single crystalline layer by energy beam irradiation
JPS5680125A (en) Formation of monocrystalline semiconductor film
JPS56157019A (en) Manufacture of substrate for semiconductor device
JPS57201015A (en) Manufacture of semiconductor device
JPS5768014A (en) Manufacture of semiconductor single crystal film
JPS57199288A (en) Laser diode
JPS57113242A (en) Marking device for semiconductor wafer
JPS5683940A (en) Manufacturing of semiconductor device
JPS5749226A (en) Single-crystallizing method for non-single crystalline semiconductor layer
JPS6489511A (en) Manufacture of single crystal silicon film
JPS57211724A (en) Manufacture of semiconductor device