JPS5745975A - Input protecting device for semiconductor device - Google Patents

Input protecting device for semiconductor device

Info

Publication number
JPS5745975A
JPS5745975A JP55121511A JP12151180A JPS5745975A JP S5745975 A JPS5745975 A JP S5745975A JP 55121511 A JP55121511 A JP 55121511A JP 12151180 A JP12151180 A JP 12151180A JP S5745975 A JPS5745975 A JP S5745975A
Authority
JP
Japan
Prior art keywords
gate
electrode
drain
insulation
large current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55121511A
Other languages
Japanese (ja)
Inventor
Takashi Uno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55121511A priority Critical patent/JPS5745975A/en
Publication of JPS5745975A publication Critical patent/JPS5745975A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To obtain an input protecting device strong against a large current by using an insulated gate type FET in which the second gate electrode is disposed via an insulating film on the first gate electrode as a gate protection. CONSTITUTION:A polycrystalline silicon resistor 2 is formed between an input terminal 3 and a terminal 4 consecutive to an input terminal 3, and a floating electrode 9 of a protecting transistor TR is simultaneously formed. The second gate electrode 12 is disposed through the second gate oxidized film 5' for insulation on the electrode 9, and is connected to a reference potential together with a source 14. On the other hand, a drain 14' is connected via a resistor 2 to terminals 3 and 4. In this manner the withstand voltage of the drain 14' becomes considerable low value. Since the potential of the gate 9 is floated due to the capacitive coupling between the electrode 12 and the drain 14', the electrolysis in the gate oxidized film is weakened, and a breakdown in the insulation can hardly be taken plate even in large current.
JP55121511A 1980-09-02 1980-09-02 Input protecting device for semiconductor device Pending JPS5745975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55121511A JPS5745975A (en) 1980-09-02 1980-09-02 Input protecting device for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55121511A JPS5745975A (en) 1980-09-02 1980-09-02 Input protecting device for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5745975A true JPS5745975A (en) 1982-03-16

Family

ID=14813006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55121511A Pending JPS5745975A (en) 1980-09-02 1980-09-02 Input protecting device for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5745975A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6086856A (en) * 1983-10-19 1985-05-16 Mitsubishi Electric Corp Input protective circuit device for semiconductor device
US4672402A (en) * 1983-03-31 1987-06-09 Nippondenso Co., Ltd. Semiconductor circuit device including an overvoltage protection element
US4893159A (en) * 1985-09-25 1990-01-09 Kabushiki Kaisha Toshiba Protected MOS transistor circuit
US4990984A (en) * 1987-11-27 1991-02-05 Nec Corporation Semiconductor device having protective element
US5019883A (en) * 1987-01-28 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Input protective apparatus of semiconductor device
US5142345A (en) * 1989-04-13 1992-08-25 Mitsubishi Denki Kabushiki Kaisha Structure of input protection transistor in semiconductor device including memory transistor having double-layered gate and method of manufacturing semiconductor device including such input protection transistor
US5183773A (en) * 1989-04-13 1993-02-02 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device including such input protection transistor
JP2015082699A (en) * 2013-10-21 2015-04-27 アスモ株式会社 Motor controller

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672402A (en) * 1983-03-31 1987-06-09 Nippondenso Co., Ltd. Semiconductor circuit device including an overvoltage protection element
JPS6086856A (en) * 1983-10-19 1985-05-16 Mitsubishi Electric Corp Input protective circuit device for semiconductor device
US4893159A (en) * 1985-09-25 1990-01-09 Kabushiki Kaisha Toshiba Protected MOS transistor circuit
US5019883A (en) * 1987-01-28 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Input protective apparatus of semiconductor device
US4990984A (en) * 1987-11-27 1991-02-05 Nec Corporation Semiconductor device having protective element
US5142345A (en) * 1989-04-13 1992-08-25 Mitsubishi Denki Kabushiki Kaisha Structure of input protection transistor in semiconductor device including memory transistor having double-layered gate and method of manufacturing semiconductor device including such input protection transistor
US5183773A (en) * 1989-04-13 1993-02-02 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device including such input protection transistor
JP2015082699A (en) * 2013-10-21 2015-04-27 アスモ株式会社 Motor controller

Similar Documents

Publication Publication Date Title
JPS577969A (en) Semiconductor integrated circuit
JPS56169369A (en) High withstand voltage mos field effect semiconductor device
JPS5493981A (en) Semiconductor device
MY102019A (en) A semiconductor memory device.
JPS5745975A (en) Input protecting device for semiconductor device
KR890001199A (en) Semiconductor devices and circuits
JPS55132072A (en) Mos semiconductor device
JPS57166713A (en) Output circuit
JPS574151A (en) Mos integrated circuit device
JPS6436060A (en) Static electricity protective device of mis integrated circuit
JPS5667962A (en) Gate protection circuit of mos field effect transistor
JPS56110263A (en) Thyristor element
JPS56150865A (en) Insulated gate type field effect semiconductor device
JPS5289478A (en) Mos integrated circuit
JPS57134975A (en) Nonvolatile semiconductor memory
JPS57180169A (en) Insulating gate type protective device
JPS558087A (en) Semiconductor device with input protection device
JPS54146975A (en) Protection circuit of semiconductor device
JPS57147280A (en) Insulated gate field effect transistor
JPS56133871A (en) Mos field effect semiconductor device with high breakdown voltage
JPS6414960A (en) Semiconductor element
JPS5757029A (en) Semiconductor switch
JPS57121271A (en) Field effect transistor
JPS56158479A (en) Semiconductor device
JPS556856A (en) Semiconductor integrated circuit