JPS5743428A - Mesa etching method - Google Patents

Mesa etching method

Info

Publication number
JPS5743428A
JPS5743428A JP55118636A JP11863680A JPS5743428A JP S5743428 A JPS5743428 A JP S5743428A JP 55118636 A JP55118636 A JP 55118636A JP 11863680 A JP11863680 A JP 11863680A JP S5743428 A JPS5743428 A JP S5743428A
Authority
JP
Japan
Prior art keywords
layer
etching
mesa
type inp
etchant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55118636A
Other languages
Japanese (ja)
Inventor
Yoshinari Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55118636A priority Critical patent/JPS5743428A/en
Publication of JPS5743428A publication Critical patent/JPS5743428A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials

Landscapes

  • Weting (AREA)

Abstract

PURPOSE:To finish an Ni+1 layer in the predetermined shape by employing an etchant having extremely slow etching velocity for an Ni layer when etching the Ni+1 layer, thereby etching the Ni+1 layer from its section. CONSTITUTION:An n type InP layer 2, an InGaAsP active region layer 3 and a P type InP layer 4 are sequentially formed on an n type InP substrate 4 by a continuous liquid epitaxial growth, and an SiO2 mask 21 is further formed on the layer 4. When a mixture of hydrogen bromide and phosphoric acid is used as an etchant A for mesa etching, the exposed surface of the layer 3 is presented, and the etching is further continued to formed the bottom of the mesa part in the predetermined size. After a mixture of sulfuric acid, hydrogen peroxide and water is used as an etchant B for etching, the mesa section exposed by the mesa etching by the second liquid epitaxial growth is buried with an n type InP layer, thereby completing a wafer for buried hetero configuration laser.
JP55118636A 1980-08-28 1980-08-28 Mesa etching method Pending JPS5743428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55118636A JPS5743428A (en) 1980-08-28 1980-08-28 Mesa etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55118636A JPS5743428A (en) 1980-08-28 1980-08-28 Mesa etching method

Publications (1)

Publication Number Publication Date
JPS5743428A true JPS5743428A (en) 1982-03-11

Family

ID=14741433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55118636A Pending JPS5743428A (en) 1980-08-28 1980-08-28 Mesa etching method

Country Status (1)

Country Link
JP (1) JPS5743428A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948753A (en) * 1984-03-27 1990-08-14 Matsushita Electric Industrial Co., Ltd. Method of producing stripe-structure semiconductor laser
US5020927A (en) * 1986-11-21 1991-06-04 Brother Kogyo Kabushiki Kaisha Grouping of dot data in a multiple column dot-matrix printer
US5045499A (en) * 1987-09-01 1991-09-03 Research Development Corporation Of Japan Method of manufacturing a distributed brass reflector type semiconductor laser
US5082799A (en) * 1990-09-14 1992-01-21 Gte Laboratories Incorporated Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers
US5222091A (en) * 1990-09-14 1993-06-22 Gte Laboratories Incorporated Structure for indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor
US5786234A (en) * 1995-10-17 1998-07-28 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor laser

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5163771A (en) * 1974-11-29 1976-06-02 Azusa Tanahashi Isunose zatono seizohoho
JPS5168771A (en) * 1974-12-11 1976-06-14 Matsushita Electric Industrial Co Ltd Heterokozohandotaino sentakufushokuhoho
JPS5472692A (en) * 1977-11-21 1979-06-11 Sharp Corp Stripe structure and manufacture for semiconductor laser element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5163771A (en) * 1974-11-29 1976-06-02 Azusa Tanahashi Isunose zatono seizohoho
JPS5168771A (en) * 1974-12-11 1976-06-14 Matsushita Electric Industrial Co Ltd Heterokozohandotaino sentakufushokuhoho
JPS5472692A (en) * 1977-11-21 1979-06-11 Sharp Corp Stripe structure and manufacture for semiconductor laser element

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948753A (en) * 1984-03-27 1990-08-14 Matsushita Electric Industrial Co., Ltd. Method of producing stripe-structure semiconductor laser
US5020927A (en) * 1986-11-21 1991-06-04 Brother Kogyo Kabushiki Kaisha Grouping of dot data in a multiple column dot-matrix printer
US5045499A (en) * 1987-09-01 1991-09-03 Research Development Corporation Of Japan Method of manufacturing a distributed brass reflector type semiconductor laser
US5082799A (en) * 1990-09-14 1992-01-21 Gte Laboratories Incorporated Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers
WO1992005576A1 (en) * 1990-09-14 1992-04-02 Gte Laboratories Incorporated New structure and method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers
US5222091A (en) * 1990-09-14 1993-06-22 Gte Laboratories Incorporated Structure for indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor
US5786234A (en) * 1995-10-17 1998-07-28 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor laser

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