JPS5749225A - Single-crystallizing method for non-single crystalline semiconductor layer - Google Patents

Single-crystallizing method for non-single crystalline semiconductor layer

Info

Publication number
JPS5749225A
JPS5749225A JP55124823A JP12482380A JPS5749225A JP S5749225 A JPS5749225 A JP S5749225A JP 55124823 A JP55124823 A JP 55124823A JP 12482380 A JP12482380 A JP 12482380A JP S5749225 A JPS5749225 A JP S5749225A
Authority
JP
Japan
Prior art keywords
layer
energy beam
scan
crystallize
starting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55124823A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0142127B2 (2
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55124823A priority Critical patent/JPS5749225A/ja
Publication of JPS5749225A publication Critical patent/JPS5749225A/ja
Publication of JPH0142127B2 publication Critical patent/JPH0142127B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP55124823A 1980-09-09 1980-09-09 Single-crystallizing method for non-single crystalline semiconductor layer Granted JPS5749225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55124823A JPS5749225A (en) 1980-09-09 1980-09-09 Single-crystallizing method for non-single crystalline semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55124823A JPS5749225A (en) 1980-09-09 1980-09-09 Single-crystallizing method for non-single crystalline semiconductor layer

Publications (2)

Publication Number Publication Date
JPS5749225A true JPS5749225A (en) 1982-03-23
JPH0142127B2 JPH0142127B2 (2) 1989-09-11

Family

ID=14894982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55124823A Granted JPS5749225A (en) 1980-09-09 1980-09-09 Single-crystallizing method for non-single crystalline semiconductor layer

Country Status (1)

Country Link
JP (1) JPS5749225A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194423A (ja) * 1983-04-20 1984-11-05 Agency Of Ind Science & Technol 半導体結晶層の製造方法
JP2023139429A (ja) * 2022-03-22 2023-10-04 三菱電機株式会社 半導体装置の製造方法および半導体製造装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194423A (ja) * 1983-04-20 1984-11-05 Agency Of Ind Science & Technol 半導体結晶層の製造方法
JP2023139429A (ja) * 2022-03-22 2023-10-04 三菱電機株式会社 半導体装置の製造方法および半導体製造装置

Also Published As

Publication number Publication date
JPH0142127B2 (2) 1989-09-11

Similar Documents

Publication Publication Date Title
WO1989004548A3 (en) Ion implantation and annealing of compound semiconductor layers
JPS56160034A (en) Impurity diffusion
JPS5567132A (en) Method for manufacturing semiconductor device
JPS5673697A (en) Manufacture of single crystal thin film
JPS5749225A (en) Single-crystallizing method for non-single crystalline semiconductor layer
JPS57162433A (en) Scanning method for energy beam
JPS57128092A (en) Imbedded type semiconductor laser device
JPS5633821A (en) Photoannealing method for semiconductor layer
JPS5548991A (en) Semiconductor joining laser forming method
JPS5749226A (en) Single-crystallizing method for non-single crystalline semiconductor layer
JPS56126915A (en) Manufacture of semiconductor device
Kachurin Epitaxial Crystallization of GaP Films on Si by Nanosecond Laser Pulses
JPS5352355A (en) Impurity gettering method
Sadana et al. Regrowth Behavior of Three Different Damage Structures in P+ Implanted and Subsequently Laser Annealed Si
JPS5575281A (en) Manufacturing method of semiconductor device
JPS6484619A (en) Formation of semiconductor single crystal layer
JPS5524468A (en) Manufacture of semiconductor
JPS5299067A (en) Semiconductor crystal multilayer continuous growing method
JPS6436029A (en) Formation of pattern of polycrystalline semiconductor thin film
JPS5683932A (en) Production of semiconductor device
JPS5678154A (en) Manufacture of semiconductor device
JPS55162234A (en) Manufacture of semiconductor device
JPS5518037A (en) Semiconductor laser
JPS5242379A (en) Method of inspecting pinholes of insulating film formed on semiconduct or surface
JPS58115814A (ja) 電子線アニ−ル方法