JPS5299067A - Semiconductor crystal multilayer continuous growing method - Google Patents

Semiconductor crystal multilayer continuous growing method

Info

Publication number
JPS5299067A
JPS5299067A JP1672976A JP1672976A JPS5299067A JP S5299067 A JPS5299067 A JP S5299067A JP 1672976 A JP1672976 A JP 1672976A JP 1672976 A JP1672976 A JP 1672976A JP S5299067 A JPS5299067 A JP S5299067A
Authority
JP
Japan
Prior art keywords
growing method
semiconductor crystal
crystal multilayer
multilayer continuous
continuous growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1672976A
Other languages
Japanese (ja)
Inventor
Saburo Yamamoto
Morichika Yano
Yukio Kurata
Kaneki Matsui
Akira Komuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1672976A priority Critical patent/JPS5299067A/en
Publication of JPS5299067A publication Critical patent/JPS5299067A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To improve the crystallinity of grown layers and make the crystal composition distribution and impurity distribution of each layer even, in a crystal growing method for double hetero type semiconductor lasers.
COPYRIGHT: (C)1977,JPO&Japio
JP1672976A 1976-02-17 1976-02-17 Semiconductor crystal multilayer continuous growing method Pending JPS5299067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1672976A JPS5299067A (en) 1976-02-17 1976-02-17 Semiconductor crystal multilayer continuous growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1672976A JPS5299067A (en) 1976-02-17 1976-02-17 Semiconductor crystal multilayer continuous growing method

Publications (1)

Publication Number Publication Date
JPS5299067A true JPS5299067A (en) 1977-08-19

Family

ID=11924341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1672976A Pending JPS5299067A (en) 1976-02-17 1976-02-17 Semiconductor crystal multilayer continuous growing method

Country Status (1)

Country Link
JP (1) JPS5299067A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61268023A (en) * 1985-05-13 1986-11-27 Stanley Electric Co Ltd Manufacture of semiconductor element
JPS61268024A (en) * 1985-05-13 1986-11-27 Stanley Electric Co Ltd Manufacture of semiconductor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61268023A (en) * 1985-05-13 1986-11-27 Stanley Electric Co Ltd Manufacture of semiconductor element
JPS61268024A (en) * 1985-05-13 1986-11-27 Stanley Electric Co Ltd Manufacture of semiconductor element

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