JPS5751127A - Growth of semiconductor of compound of 3-5 group in gaseous phase - Google Patents

Growth of semiconductor of compound of 3-5 group in gaseous phase

Info

Publication number
JPS5751127A
JPS5751127A JP12755580A JP12755580A JPS5751127A JP S5751127 A JPS5751127 A JP S5751127A JP 12755580 A JP12755580 A JP 12755580A JP 12755580 A JP12755580 A JP 12755580A JP S5751127 A JPS5751127 A JP S5751127A
Authority
JP
Japan
Prior art keywords
group
container
reaction tube
growth
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12755580A
Other languages
Japanese (ja)
Inventor
Michihiro Ito
Kazuaki Segawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12755580A priority Critical patent/JPS5751127A/en
Publication of JPS5751127A publication Critical patent/JPS5751127A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: In reacting a gas containing an element of V group with an element of III group to grow a semiconductor in a gaseous phase, to enable the control of reaction efficiency, and to obtain the desired characteristics with good reproducibility, by making a container for the element of III group hollow.
CONSTITUTION: The container 2 with its top open containing the element 3 (Ga, etc.) of III group and the substrate base plate 4 of crystal are put in the reaction tube 1 saturated with an element of V group (As, etc.). The container 2 is set in a hollow state in such a way that its bottom is not brought into contact with the inner face of the reaction tube 1. The reaction tube 1 is then heated, AsCl diluted with H2 is introduced from the gas inlet 6, and the growth of GaAs is started. In the operation, the space between the bottom of the container 2 and the reaction tube 1 is varied, and the gas is partially passed through it so that the reaction efficiency of Ga and HCl to influence the characteristics of GaAs is controlled. Consequently, the growth layer having the desired characteristics is formed with good reproducibility.
COPYRIGHT: (C)1982,JPO&Japio
JP12755580A 1980-09-12 1980-09-12 Growth of semiconductor of compound of 3-5 group in gaseous phase Pending JPS5751127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12755580A JPS5751127A (en) 1980-09-12 1980-09-12 Growth of semiconductor of compound of 3-5 group in gaseous phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12755580A JPS5751127A (en) 1980-09-12 1980-09-12 Growth of semiconductor of compound of 3-5 group in gaseous phase

Publications (1)

Publication Number Publication Date
JPS5751127A true JPS5751127A (en) 1982-03-25

Family

ID=14962903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12755580A Pending JPS5751127A (en) 1980-09-12 1980-09-12 Growth of semiconductor of compound of 3-5 group in gaseous phase

Country Status (1)

Country Link
JP (1) JPS5751127A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203800A (en) * 1983-04-28 1984-11-17 Mitsubishi Monsanto Chem Co Vapor phase epitaxial growth of single crystal thin film of inorganic compound
JPS63155913A (en) * 1986-12-03 1988-06-29 ウーテーアー・エスアー・フアブリツク・デボーシユ Circuit for shaping signal generated by contact

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203800A (en) * 1983-04-28 1984-11-17 Mitsubishi Monsanto Chem Co Vapor phase epitaxial growth of single crystal thin film of inorganic compound
JPS63155913A (en) * 1986-12-03 1988-06-29 ウーテーアー・エスアー・フアブリツク・デボーシユ Circuit for shaping signal generated by contact

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