JPS575352A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS575352A
JPS575352A JP8003580A JP8003580A JPS575352A JP S575352 A JPS575352 A JP S575352A JP 8003580 A JP8003580 A JP 8003580A JP 8003580 A JP8003580 A JP 8003580A JP S575352 A JPS575352 A JP S575352A
Authority
JP
Japan
Prior art keywords
ics
external lead
buffer function
connecting pieces
lead connecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8003580A
Other languages
Japanese (ja)
Inventor
Masao Hino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8003580A priority Critical patent/JPS575352A/en
Publication of JPS575352A publication Critical patent/JPS575352A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the damage of ICs due to the collision of the ICs with each other during the movement between the steps as contained in a magazine case by incroporating buffer function in the IC by partly deforming the external lead connecting piece of the IC. CONSTITUTION:A ceramic substrate 1 is bonded via a lead frame to a ceramic cap 2, and an external lead 3 is supported by and secured at the free end to connecting pieces 4, 5. Glass sealed ICs are first prepared, and external lead connecting piece 4 is then removed. The external lead connecting pieces 5 disposed at both ends of the IC are retained as they are provided with buffer function for protecting both ends of the ceramic. In this state the IC is stamped and electrically sorted at the final step. A magazine case is used to convey the ICs, and since the ICs have external lead connecting pieces 5 with buffer function at the ends, even if the ICs collide each other during the movement, they are not damaged.
JP8003580A 1980-06-13 1980-06-13 Manufacture of semiconductor device Pending JPS575352A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8003580A JPS575352A (en) 1980-06-13 1980-06-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8003580A JPS575352A (en) 1980-06-13 1980-06-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS575352A true JPS575352A (en) 1982-01-12

Family

ID=13706998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8003580A Pending JPS575352A (en) 1980-06-13 1980-06-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS575352A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108630616A (en) * 2018-04-19 2018-10-09 如皋市大昌电子有限公司 A kind of patch type high voltage silicon rectifier stack and its production technology

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108630616A (en) * 2018-04-19 2018-10-09 如皋市大昌电子有限公司 A kind of patch type high voltage silicon rectifier stack and its production technology

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