JPS575363A - Manufacture of mos type semiconductor device - Google Patents

Manufacture of mos type semiconductor device

Info

Publication number
JPS575363A
JPS575363A JP7919680A JP7919680A JPS575363A JP S575363 A JPS575363 A JP S575363A JP 7919680 A JP7919680 A JP 7919680A JP 7919680 A JP7919680 A JP 7919680A JP S575363 A JPS575363 A JP S575363A
Authority
JP
Japan
Prior art keywords
film
mos type
semiconductor device
oxidized film
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7919680A
Other languages
Japanese (ja)
Inventor
Jiro Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7919680A priority Critical patent/JPS575363A/en
Publication of JPS575363A publication Critical patent/JPS575363A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Abstract

PURPOSE:To form in high yield an MOS type semiconductor device highly integrated and increased in its performance by forming an aluminum gate MOS type element using self-alignment. CONSTITUTION:A thick thermally oxidized film 33 is grown on an Si substrate 31, and a hole is opened thereat. A thin thermally oxidized film 33' and a nitrided film 36 are formed in the hole, an insulating film on the source and drain regions is removed, and the surface of the substrate is exposed. Then, the source and the drain regions are diffused and formed, and an oxidized film 33'' is formed on the surface. Then, the nitrided film 36 of the gate region is removed, and a gate oxidized film 33'' is formed. Then, an electrode wire 35 is formed with aluminum depositing and selectively removing method. Since this employs a self-alignment, the MOS transistor can be formed in high accuracy and high yield.
JP7919680A 1980-06-12 1980-06-12 Manufacture of mos type semiconductor device Pending JPS575363A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7919680A JPS575363A (en) 1980-06-12 1980-06-12 Manufacture of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7919680A JPS575363A (en) 1980-06-12 1980-06-12 Manufacture of mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS575363A true JPS575363A (en) 1982-01-12

Family

ID=13683211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7919680A Pending JPS575363A (en) 1980-06-12 1980-06-12 Manufacture of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS575363A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63176004A (en) * 1987-01-17 1988-07-20 Mitsubishi Electric Corp Horn antenna system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63176004A (en) * 1987-01-17 1988-07-20 Mitsubishi Electric Corp Horn antenna system

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