JPS5753960A - Formation of selective oxide film - Google Patents

Formation of selective oxide film

Info

Publication number
JPS5753960A
JPS5753960A JP55129777A JP12977780A JPS5753960A JP S5753960 A JPS5753960 A JP S5753960A JP 55129777 A JP55129777 A JP 55129777A JP 12977780 A JP12977780 A JP 12977780A JP S5753960 A JPS5753960 A JP S5753960A
Authority
JP
Japan
Prior art keywords
oxide film
substrate
film
nitriding
selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55129777A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6250979B2 (cs
Inventor
Kenji Mitsui
Toru Okuma
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP55129777A priority Critical patent/JPS5753960A/ja
Publication of JPS5753960A publication Critical patent/JPS5753960A/ja
Publication of JPS6250979B2 publication Critical patent/JPS6250979B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP55129777A 1980-09-16 1980-09-16 Formation of selective oxide film Granted JPS5753960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55129777A JPS5753960A (en) 1980-09-16 1980-09-16 Formation of selective oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55129777A JPS5753960A (en) 1980-09-16 1980-09-16 Formation of selective oxide film

Publications (2)

Publication Number Publication Date
JPS5753960A true JPS5753960A (en) 1982-03-31
JPS6250979B2 JPS6250979B2 (cs) 1987-10-28

Family

ID=15017951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55129777A Granted JPS5753960A (en) 1980-09-16 1980-09-16 Formation of selective oxide film

Country Status (1)

Country Link
JP (1) JPS5753960A (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61112344A (ja) * 1984-11-06 1986-05-30 Nippon Denso Co Ltd 半導体素子分離領域の形成方法
US5913148A (en) * 1989-09-08 1999-06-15 Lucent Technologies Inc Reduced size etching method for integrated circuits

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6341590U (cs) * 1986-09-03 1988-03-18

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923071A (cs) * 1972-06-28 1974-03-01
JPS5391666A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923071A (cs) * 1972-06-28 1974-03-01
JPS5391666A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Manufacture for semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61112344A (ja) * 1984-11-06 1986-05-30 Nippon Denso Co Ltd 半導体素子分離領域の形成方法
US5913148A (en) * 1989-09-08 1999-06-15 Lucent Technologies Inc Reduced size etching method for integrated circuits

Also Published As

Publication number Publication date
JPS6250979B2 (cs) 1987-10-28

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