JPS5753982A - - Google Patents

Info

Publication number
JPS5753982A
JPS5753982A JP56110982A JP11098281A JPS5753982A JP S5753982 A JPS5753982 A JP S5753982A JP 56110982 A JP56110982 A JP 56110982A JP 11098281 A JP11098281 A JP 11098281A JP S5753982 A JPS5753982 A JP S5753982A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56110982A
Inventor
Rumenitsuku Buradeimiaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of JPS5753982A publication Critical patent/JPS5753982A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
JP56110982A 1980-07-25 1981-07-17 Pending JPS5753982A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/172,338 US4409607A (en) 1980-07-25 1980-07-25 Normally-on enhancement mode MOSFET with negative threshold gating

Publications (1)

Publication Number Publication Date
JPS5753982A true JPS5753982A (ja) 1982-03-31

Family

ID=22627294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56110982A Pending JPS5753982A (ja) 1980-07-25 1981-07-17

Country Status (2)

Country Link
US (1) US4409607A (ja)
JP (1) JPS5753982A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03181136A (ja) * 1989-12-11 1991-08-07 Mitsubishi Electric Corp 半導体装置の製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4937640A (en) * 1980-11-03 1990-06-26 International Business Machines Corporation Short channel MOSFET
JPS58197775A (ja) * 1982-05-13 1983-11-17 Canon Inc 薄膜トランジスタ
JPH0955496A (ja) * 1995-08-17 1997-02-25 Oki Electric Ind Co Ltd 高耐圧ｍｏｓトランジスタ及びその製造方法
GB2355851B (en) * 1999-06-24 2003-11-19 Lucent Technologies Inc MOS Transistor
US6740912B1 (en) 1999-06-24 2004-05-25 Agere Systems Inc. Semiconductor device free of LLD regions
US7974055B2 (en) * 2006-06-29 2011-07-05 Lin Wallace W Method for protecting circuits from damage due to currents and voltages during manufacture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3996655A (en) * 1973-12-14 1976-12-14 Texas Instruments Incorporated Processes of forming insulated gate field effect transistors with channel lengths of one micron in integrated circuits with component isolated and product
JPS5226177A (en) * 1975-08-25 1977-02-26 Toshiba Corp Semi-conductor unit
US4242691A (en) * 1978-09-18 1980-12-30 Mitsubishi Denki Kabushiki Kaisha MOS Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03181136A (ja) * 1989-12-11 1991-08-07 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US4409607A (en) 1983-10-11

Similar Documents

Publication Publication Date Title
FR2473621B1 (ja)
CH663511GA3 (ja)
DE3153460A1 (ja)
FR2473396B1 (ja)
DE3152204T1 (ja)
FR2474356B1 (ja)
FR2477204B1 (ja)
FR2473422B1 (ja)
DE3050962A1 (ja)
FR2473796B1 (ja)
DE3153680A1 (ja)
FR2473559B1 (ja)
FR2486180B1 (ja)
FR2473201B3 (ja)
FR2473091B1 (ja)
FR2473104B3 (ja)
CH655525B (ja)
FR2473469B1 (ja)
FR2491012B1 (ja)
FR2473161B1 (ja)
FR2494084B3 (ja)
CH641627GA3 (ja)
FR2473228B1 (ja)
FR2467999B2 (ja)
FR2473430B1 (ja)