JPS5758363A - Manufacture of mos type semiconductor device - Google Patents

Manufacture of mos type semiconductor device

Info

Publication number
JPS5758363A
JPS5758363A JP55133014A JP13301480A JPS5758363A JP S5758363 A JPS5758363 A JP S5758363A JP 55133014 A JP55133014 A JP 55133014A JP 13301480 A JP13301480 A JP 13301480A JP S5758363 A JPS5758363 A JP S5758363A
Authority
JP
Japan
Prior art keywords
oxide film
substrate
type semiconductor
mos type
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55133014A
Other languages
Japanese (ja)
Inventor
Tsuneo Ajioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP55133014A priority Critical patent/JPS5758363A/en
Publication of JPS5758363A publication Critical patent/JPS5758363A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain an MOS type semiconductor to stabilize threshold voltage by a method wherein after a gate oxide film is formed on the surface of an Si substrate, a laser beam is irradiated the gate oxide film. CONSTITUTION:After field oxide films 2 are formed on the Si substrate 1, the gate oxide film 3 of 500-1,500Angstrom thickness is formed by thermal oxidation. Then the laser beam 4 is irradiated through the oxide film 3 to anneal the substrate 1 and the interface between the substrate 1 and the oxide film 3. After then an electrode 5 is formed at the prescribed part on the oxide film 3. The unnecessitated part of the oxide film 3 is photolithographed, and source and drain regions 6, 7 are formed in the Si substrate 1 by predeposition and thermal diffusion. Accordingly the MOS transistor to reduce surface state and to stabilize threshold voltage is manufactured.
JP55133014A 1980-09-26 1980-09-26 Manufacture of mos type semiconductor device Pending JPS5758363A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55133014A JPS5758363A (en) 1980-09-26 1980-09-26 Manufacture of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55133014A JPS5758363A (en) 1980-09-26 1980-09-26 Manufacture of mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5758363A true JPS5758363A (en) 1982-04-08

Family

ID=15094773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55133014A Pending JPS5758363A (en) 1980-09-26 1980-09-26 Manufacture of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5758363A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184732A (en) * 1982-04-23 1983-10-28 Nec Corp Annealing of semiconductor device
JPS5961138A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
JPS6086845A (en) * 1983-10-19 1985-05-16 Fujitsu Ltd Manufacture of semiconductor device
JPS60116166A (en) * 1983-11-29 1985-06-22 Fujitsu Ltd Manufacture of semiconductor device
JPS60216561A (en) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd Heat-treating method
US5219773A (en) * 1990-06-26 1993-06-15 Massachusetts Institute Of Technology Method of making reoxidized nitrided oxide MOSFETs
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US6835607B2 (en) 1993-10-01 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for manufacturing the same
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US9105727B2 (en) 2002-04-09 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10133139B2 (en) 2002-05-17 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184732A (en) * 1982-04-23 1983-10-28 Nec Corp Annealing of semiconductor device
JPS5961138A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
JPS6086845A (en) * 1983-10-19 1985-05-16 Fujitsu Ltd Manufacture of semiconductor device
JPS60116166A (en) * 1983-11-29 1985-06-22 Fujitsu Ltd Manufacture of semiconductor device
JPS60216561A (en) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd Heat-treating method
US5219773A (en) * 1990-06-26 1993-06-15 Massachusetts Institute Of Technology Method of making reoxidized nitrided oxide MOSFETs
US7351615B2 (en) 1992-12-26 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US6835607B2 (en) 1993-10-01 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for manufacturing the same
US7170138B2 (en) 1993-10-01 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7301209B2 (en) 1993-10-01 2007-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10050065B2 (en) 2002-04-09 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9105727B2 (en) 2002-04-09 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9406806B2 (en) 2002-04-09 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9666614B2 (en) 2002-04-09 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10083995B2 (en) 2002-04-09 2018-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10700106B2 (en) 2002-04-09 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10854642B2 (en) 2002-04-09 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US11101299B2 (en) 2002-04-09 2021-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10133139B2 (en) 2002-05-17 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US10527903B2 (en) 2002-05-17 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Display device
US11422423B2 (en) 2002-05-17 2022-08-23 Semiconductor Energy Laboratory Co., Ltd. Display device

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