JPS5772379A - Manufacture of semiconductor devuce - Google Patents

Manufacture of semiconductor devuce

Info

Publication number
JPS5772379A
JPS5772379A JP55148938A JP14893880A JPS5772379A JP S5772379 A JPS5772379 A JP S5772379A JP 55148938 A JP55148938 A JP 55148938A JP 14893880 A JP14893880 A JP 14893880A JP S5772379 A JPS5772379 A JP S5772379A
Authority
JP
Japan
Prior art keywords
layers
diffusion
film
source
lateral direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55148938A
Other languages
Japanese (ja)
Inventor
Akira Kurosawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55148938A priority Critical patent/JPS5772379A/en
Publication of JPS5772379A publication Critical patent/JPS5772379A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Abstract

PURPOSE:To reduce a short-channel effect and parasitic capacity by giving a concentration profile not only in the diffusion depth direction but also in the lateral direction about source and drain regions. CONSTITUTION:Field oxide films 2 are formed onto a P type silicon substrate 1, and P<+> layers 3 for preventing field inversion are shaped under the films 2. When a silicon oxide film 7 is formed and the whole surface is etched, the silicon oxide films 7 are left in the inner circumferential sections of diffusion windows 6. As is diffused through an ion injection method, and N<+> diffusion layers 8 (81-83) functioning as a source, a drain and other wiring layers are shaped. The whole is thermally treated for activation, and the concentration profile in the lateral direction is obtained. A PSG film 9 is accumulated through a CVD method, contact holes are opened and the film is extracted, and electrodes 101, 102 are disposed.
JP55148938A 1980-10-24 1980-10-24 Manufacture of semiconductor devuce Pending JPS5772379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148938A JPS5772379A (en) 1980-10-24 1980-10-24 Manufacture of semiconductor devuce

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148938A JPS5772379A (en) 1980-10-24 1980-10-24 Manufacture of semiconductor devuce

Publications (1)

Publication Number Publication Date
JPS5772379A true JPS5772379A (en) 1982-05-06

Family

ID=15464010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148938A Pending JPS5772379A (en) 1980-10-24 1980-10-24 Manufacture of semiconductor devuce

Country Status (1)

Country Link
JP (1) JPS5772379A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961071A (en) * 1982-08-30 1984-04-07 テキサス・インスツルメンツ・インコ−ポレイテツド Insulated gate field effect transistor and method of produc-ing same
US4878100A (en) * 1988-01-19 1989-10-31 Texas Instruments Incorporated Triple-implanted drain in transistor made by oxide sidewall-spacer method
JPH0846194A (en) * 1994-07-26 1996-02-16 Nec Corp Method for manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961071A (en) * 1982-08-30 1984-04-07 テキサス・インスツルメンツ・インコ−ポレイテツド Insulated gate field effect transistor and method of produc-ing same
US4878100A (en) * 1988-01-19 1989-10-31 Texas Instruments Incorporated Triple-implanted drain in transistor made by oxide sidewall-spacer method
JPH0846194A (en) * 1994-07-26 1996-02-16 Nec Corp Method for manufacturing semiconductor device

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