JPS5762562A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5762562A
JPS5762562A JP13757980A JP13757980A JPS5762562A JP S5762562 A JPS5762562 A JP S5762562A JP 13757980 A JP13757980 A JP 13757980A JP 13757980 A JP13757980 A JP 13757980A JP S5762562 A JPS5762562 A JP S5762562A
Authority
JP
Japan
Prior art keywords
plate
gate electrode
electrode plate
cathode electrode
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13757980A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6156628B2 (2
Inventor
Tsutomu Yao
Takahiro Nagano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13757980A priority Critical patent/JPS5762562A/ja
Publication of JPS5762562A publication Critical patent/JPS5762562A/ja
Publication of JPS6156628B2 publication Critical patent/JPS6156628B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
JP13757980A 1980-10-03 1980-10-03 Semiconductor device Granted JPS5762562A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13757980A JPS5762562A (en) 1980-10-03 1980-10-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13757980A JPS5762562A (en) 1980-10-03 1980-10-03 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5762562A true JPS5762562A (en) 1982-04-15
JPS6156628B2 JPS6156628B2 (2) 1986-12-03

Family

ID=15202014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13757980A Granted JPS5762562A (en) 1980-10-03 1980-10-03 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5762562A (2)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986260A (ja) * 1982-11-10 1984-05-18 Hitachi Ltd ゲ−トタ−ンオフサイリスタ
JPS604260A (ja) * 1983-06-22 1985-01-10 Hitachi Ltd 半導体装置
JPS60150670A (ja) * 1984-01-17 1985-08-08 Mitsubishi Electric Corp 半導体装置
JPS61189668A (ja) * 1985-02-19 1986-08-23 Mitsubishi Electric Corp 半導体装置
JPS61208873A (ja) * 1985-03-13 1986-09-17 Res Dev Corp Of Japan 圧接構造型両面ゲ−ト静電誘導サイリスタ
JPS61212065A (ja) * 1985-03-18 1986-09-20 Hitachi Ltd 半導体スイツチング装置
JPS6279668A (ja) * 1985-10-02 1987-04-13 Hitachi Ltd 平形半導体装置
US4719500A (en) * 1984-03-15 1988-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and a process of producing same
JPS6347977A (ja) * 1986-08-18 1988-02-29 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ装置
JP2008098293A (ja) * 2006-10-10 2008-04-24 Nippon Inter Electronics Corp 圧接型大電力用サイリスタモジュール

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986260A (ja) * 1982-11-10 1984-05-18 Hitachi Ltd ゲ−トタ−ンオフサイリスタ
JPS604260A (ja) * 1983-06-22 1985-01-10 Hitachi Ltd 半導体装置
JPS60150670A (ja) * 1984-01-17 1985-08-08 Mitsubishi Electric Corp 半導体装置
US4719500A (en) * 1984-03-15 1988-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and a process of producing same
US4835119A (en) * 1984-03-15 1989-05-30 Mitsubishi Kenki Kabushiki Kaisha Semiconductor device and a process of producing same
JPS61189668A (ja) * 1985-02-19 1986-08-23 Mitsubishi Electric Corp 半導体装置
JPS61208873A (ja) * 1985-03-13 1986-09-17 Res Dev Corp Of Japan 圧接構造型両面ゲ−ト静電誘導サイリスタ
JPS61212065A (ja) * 1985-03-18 1986-09-20 Hitachi Ltd 半導体スイツチング装置
JPS6279668A (ja) * 1985-10-02 1987-04-13 Hitachi Ltd 平形半導体装置
JPS6347977A (ja) * 1986-08-18 1988-02-29 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ装置
JP2008098293A (ja) * 2006-10-10 2008-04-24 Nippon Inter Electronics Corp 圧接型大電力用サイリスタモジュール

Also Published As

Publication number Publication date
JPS6156628B2 (2) 1986-12-03

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