JPS6456424A - Production of organic film - Google Patents

Production of organic film

Info

Publication number
JPS6456424A
JPS6456424A JP21140887A JP21140887A JPS6456424A JP S6456424 A JPS6456424 A JP S6456424A JP 21140887 A JP21140887 A JP 21140887A JP 21140887 A JP21140887 A JP 21140887A JP S6456424 A JPS6456424 A JP S6456424A
Authority
JP
Japan
Prior art keywords
org
film
substrate
underlying substrate
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21140887A
Other languages
Japanese (ja)
Other versions
JP2679708B2 (en
Inventor
Tetsuzo Yoshimura
Yoshinobu Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62211408A priority Critical patent/JP2679708B2/en
Publication of JPS6456424A publication Critical patent/JPS6456424A/en
Application granted granted Critical
Publication of JP2679708B2 publication Critical patent/JP2679708B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To produce an org. crystalline film which has a large area and is not deteriorated in characteristics by forming a 1st org. film on a substrate, using the 1st org. film as an underlying substrate of a single crystal and growing the 2nd org. film on the underlying substrate. CONSTITUTION:The 1st org. film is formed on the substrate 2a and is subjected to zone melting to form the single crystal, by which the underlying substrate 3c is formed. The 2nd org. film 6a having the lattice constant approximate to the lattice constant of the org. single crystal film constituting the underlying substrate 3c is formed on the substrate 3c. The 2nd org. film 6a is epitaxially grown on this substrate 3c by an org. MBE method, vapor deposition method, ion plating method or cluster ion beam vapor deposition method, etc. The 2nd org. film which has the large area and is not deteriorated in the characteristics is thereby produced on the underlying substrate.
JP62211408A 1987-08-27 1987-08-27 Organic film fabrication method Expired - Lifetime JP2679708B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62211408A JP2679708B2 (en) 1987-08-27 1987-08-27 Organic film fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62211408A JP2679708B2 (en) 1987-08-27 1987-08-27 Organic film fabrication method

Publications (2)

Publication Number Publication Date
JPS6456424A true JPS6456424A (en) 1989-03-03
JP2679708B2 JP2679708B2 (en) 1997-11-19

Family

ID=16605460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62211408A Expired - Lifetime JP2679708B2 (en) 1987-08-27 1987-08-27 Organic film fabrication method

Country Status (1)

Country Link
JP (1) JP2679708B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02197822A (en) * 1988-10-13 1990-08-06 Sharp Corp Production of organic compound thin-film
WO2002008500A3 (en) * 2000-07-25 2002-05-30 Univ Texas In situ regrowth and purification of crystalline thin films

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5134392A (en) * 1974-09-17 1976-03-24 Hitachi Ltd KOGYOYOROBOTSUTONOSEIGYOHOHO
JPS5948794A (en) * 1982-09-13 1984-03-21 日本電気株式会社 Pit map memory device
JPS60166298A (en) * 1984-02-10 1985-08-29 Hitachi Ltd Membrane preparation method
JPS61165701A (en) * 1984-12-17 1986-07-26 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Multilayer optical element
JPS61184521A (en) * 1985-02-12 1986-08-18 Nippon Sheet Glass Co Ltd Manufacture of non-linear optical crystal
JPS6236095A (en) * 1985-08-06 1987-02-17 Nec Corp Formation of organic thin film crystal

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5134392A (en) * 1974-09-17 1976-03-24 Hitachi Ltd KOGYOYOROBOTSUTONOSEIGYOHOHO
JPS5948794A (en) * 1982-09-13 1984-03-21 日本電気株式会社 Pit map memory device
JPS60166298A (en) * 1984-02-10 1985-08-29 Hitachi Ltd Membrane preparation method
JPS61165701A (en) * 1984-12-17 1986-07-26 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Multilayer optical element
JPS61184521A (en) * 1985-02-12 1986-08-18 Nippon Sheet Glass Co Ltd Manufacture of non-linear optical crystal
JPS6236095A (en) * 1985-08-06 1987-02-17 Nec Corp Formation of organic thin film crystal

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02197822A (en) * 1988-10-13 1990-08-06 Sharp Corp Production of organic compound thin-film
WO2002008500A3 (en) * 2000-07-25 2002-05-30 Univ Texas In situ regrowth and purification of crystalline thin films
US6840999B2 (en) 2000-07-25 2005-01-11 Board Of Regents The University Of Texas System In situ regrowth and purification of crystalline thin films

Also Published As

Publication number Publication date
JP2679708B2 (en) 1997-11-19

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