JPS5768077A - Manufacture of schottky gate type field effect transistor - Google Patents

Manufacture of schottky gate type field effect transistor

Info

Publication number
JPS5768077A
JPS5768077A JP55145030A JP14503080A JPS5768077A JP S5768077 A JPS5768077 A JP S5768077A JP 55145030 A JP55145030 A JP 55145030A JP 14503080 A JP14503080 A JP 14503080A JP S5768077 A JPS5768077 A JP S5768077A
Authority
JP
Japan
Prior art keywords
ions
type
layer
gate type
schottky gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55145030A
Other languages
Japanese (ja)
Inventor
Kimiyoshi Yamazaki
Kazuyoshi Asai
Masayuki Ino
Katsuhiko Kurumada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55145030A priority Critical patent/JPS5768077A/en
Publication of JPS5768077A publication Critical patent/JPS5768077A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a Schottky gate type FET by etching the N type layer of a high resistance semiconductor substrate surface into two segments, injecting N type ions, connecting both segments, and forming a channel region. CONSTITUTION:Si ions are injected to a high resistance GaAs substrte 21 to form an N type layer 23, an Si3N4 film 28 is formed, is opened, Ar ions are obliquely implanted, the substrate 21 is rotated to each it in trapezoidal shape, and is divided into N type layers 31, 32. Si ions are again implanted to form an N type layer 33, and a continuous layer 34 is formed. An Si3N4 film 35 is covered thereon, is heat treated to form activated layers 36-38. The film 35 is removed, holes 40, 41 are opened, ohmic electrodes 42, 43 are attached, aluminum electrode 44 is attached to form a Schottky junction 45 completely. Since the layer 38 is formed by ion implantation, it can be formed in desired thickness readily, and an FET having the predetermined characteristics can be obtained.
JP55145030A 1980-10-15 1980-10-15 Manufacture of schottky gate type field effect transistor Pending JPS5768077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55145030A JPS5768077A (en) 1980-10-15 1980-10-15 Manufacture of schottky gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55145030A JPS5768077A (en) 1980-10-15 1980-10-15 Manufacture of schottky gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5768077A true JPS5768077A (en) 1982-04-26

Family

ID=15375781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55145030A Pending JPS5768077A (en) 1980-10-15 1980-10-15 Manufacture of schottky gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5768077A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59207669A (en) * 1983-05-10 1984-11-24 Mitsubishi Electric Corp Manufacture of field effect transistor
JP2008132832A (en) * 2006-11-27 2008-06-12 Isuzu Motors Ltd Vehicle cab lock mechanism

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59207669A (en) * 1983-05-10 1984-11-24 Mitsubishi Electric Corp Manufacture of field effect transistor
JP2008132832A (en) * 2006-11-27 2008-06-12 Isuzu Motors Ltd Vehicle cab lock mechanism

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