JPS5772385A - Manufacture of field-effect transistor - Google Patents

Manufacture of field-effect transistor

Info

Publication number
JPS5772385A
JPS5772385A JP55148156A JP14815680A JPS5772385A JP S5772385 A JPS5772385 A JP S5772385A JP 55148156 A JP55148156 A JP 55148156A JP 14815680 A JP14815680 A JP 14815680A JP S5772385 A JPS5772385 A JP S5772385A
Authority
JP
Japan
Prior art keywords
layer
active layer
gate
insulating film
protective insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55148156A
Other languages
Japanese (ja)
Other versions
JPH0147023B2 (en
Inventor
Kimiyoshi Yamazaki
Masayuki Ino
Katsuhiko Kurumada
Masamichi Omori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55148156A priority Critical patent/JPS5772385A/en
Publication of JPS5772385A publication Critical patent/JPS5772385A/en
Publication of JPH0147023B2 publication Critical patent/JPH0147023B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To decrease the effect of the secular degeneration of the surface of an active layer on a source resistor, etc., and to reduce the instability of operation by using a thick layer having comparatively high carrier density as the active layer except a gate-channel region. CONSTITUTION:A silicon injecting layer 18 is formed onto a GaAs substrate 19 having high resistance. A protective insulating film 17 is shaped, and thermally treated, thus forming the comparatively thick active layer 18. Here, a resist pattern 20 with an opening section is molded onto the protective insulating film 17, and the film 17 is removed selectively using the pattern as a mask. A layer 21 into which ions generating a shallow acceptor level are injected is formed. The resist 20 is removed, the whole is thermally treated, a source electrode 22 and a drain electrode 24 are shaped, and a Schottky junction gate electrode 25 is molded in the gate- channel resion in a self-matching shape.
JP55148156A 1980-10-24 1980-10-24 Manufacture of field-effect transistor Granted JPS5772385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148156A JPS5772385A (en) 1980-10-24 1980-10-24 Manufacture of field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148156A JPS5772385A (en) 1980-10-24 1980-10-24 Manufacture of field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5772385A true JPS5772385A (en) 1982-05-06
JPH0147023B2 JPH0147023B2 (en) 1989-10-12

Family

ID=15446506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148156A Granted JPS5772385A (en) 1980-10-24 1980-10-24 Manufacture of field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5772385A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145164A (en) * 1982-02-24 1983-08-29 Fujitsu Ltd Manufacture of semiconductor device
JPS61163662A (en) * 1985-01-14 1986-07-24 Agency Of Ind Science & Technol Manufacture of field-effect transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5183478A (en) * 1974-12-06 1976-07-22 Hughes Aircraft Co Enhansumentomoodo shotsutokiishohekiigeetohikagariumudenkaikokatoranjisutaa
JPS5414174A (en) * 1977-07-04 1979-02-02 Nec Corp Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5183478A (en) * 1974-12-06 1976-07-22 Hughes Aircraft Co Enhansumentomoodo shotsutokiishohekiigeetohikagariumudenkaikokatoranjisutaa
JPS5414174A (en) * 1977-07-04 1979-02-02 Nec Corp Manufacture for semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145164A (en) * 1982-02-24 1983-08-29 Fujitsu Ltd Manufacture of semiconductor device
JPS61163662A (en) * 1985-01-14 1986-07-24 Agency Of Ind Science & Technol Manufacture of field-effect transistor

Also Published As

Publication number Publication date
JPH0147023B2 (en) 1989-10-12

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