JPS5768079A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPS5768079A
JPS5768079A JP55143626A JP14362680A JPS5768079A JP S5768079 A JPS5768079 A JP S5768079A JP 55143626 A JP55143626 A JP 55143626A JP 14362680 A JP14362680 A JP 14362680A JP S5768079 A JPS5768079 A JP S5768079A
Authority
JP
Japan
Prior art keywords
film
thin film
polysilicon thin
single crystal
crystal substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55143626A
Other languages
Japanese (ja)
Other versions
JPS6222540B2 (en
Inventor
Shinji Onga
Kazumichi Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55143626A priority Critical patent/JPS5768079A/en
Publication of JPS5768079A publication Critical patent/JPS5768079A/en
Publication of JPS6222540B2 publication Critical patent/JPS6222540B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To detect the pressure difference between an insulating single crystal substrate side a polysilicon thin film side by the variation in the resistance induced by a strain by forming the polysilicon thin film on an insulating film on the insulating single crystal substrate or on a semiconductor substrate. CONSTITUTION:An SiO2 film 2 is formed on the (001) plane of an Si single crystal substrate 1, and a polysilicon thin film 3 is formed in an island. A gate oxidized film 4 is formed by oxidation, polysilicon 5 is superposed, is plasma etched, and a gate region is formed. It is treated in a POCl3 atmosphere to form an N type source 6, a drain 7 and a gate electrode 5. An SiO2 film 8 is covered, a window 9 is opened, an aluminum electrode is attached, and is annealed. With this structure, a sensor having temperature dependency smaller than the conventional one can be obtained, the irregularity between the lot or wafer can be managed only by controlling the thickness of the polysilicon thin film, and the dependency in the variation of the temperature characteritics can be almost eliminated.
JP55143626A 1980-10-16 1980-10-16 Semiconductor pressure sensor Granted JPS5768079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55143626A JPS5768079A (en) 1980-10-16 1980-10-16 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55143626A JPS5768079A (en) 1980-10-16 1980-10-16 Semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPS5768079A true JPS5768079A (en) 1982-04-26
JPS6222540B2 JPS6222540B2 (en) 1987-05-19

Family

ID=15343121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55143626A Granted JPS5768079A (en) 1980-10-16 1980-10-16 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS5768079A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5503017A (en) * 1993-05-21 1996-04-02 Nippondenso Co., Ltd. Semiconductor acceleration sensor
US5504356A (en) * 1992-11-16 1996-04-02 Nippondenso Co., Ltd. Semiconductor accelerometer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831078A (en) * 1971-08-26 1973-04-24
JPS54150987A (en) * 1978-05-18 1979-11-27 Gulton Ind Inc Strain gauge transducer and method of fabricating same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831078A (en) * 1971-08-26 1973-04-24
JPS54150987A (en) * 1978-05-18 1979-11-27 Gulton Ind Inc Strain gauge transducer and method of fabricating same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504356A (en) * 1992-11-16 1996-04-02 Nippondenso Co., Ltd. Semiconductor accelerometer
US5503017A (en) * 1993-05-21 1996-04-02 Nippondenso Co., Ltd. Semiconductor acceleration sensor

Also Published As

Publication number Publication date
JPS6222540B2 (en) 1987-05-19

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