JPS5771129A - Liquid phase epitaxial growth - Google Patents

Liquid phase epitaxial growth

Info

Publication number
JPS5771129A
JPS5771129A JP55146230A JP14623080A JPS5771129A JP S5771129 A JPS5771129 A JP S5771129A JP 55146230 A JP55146230 A JP 55146230A JP 14623080 A JP14623080 A JP 14623080A JP S5771129 A JPS5771129 A JP S5771129A
Authority
JP
Japan
Prior art keywords
solution
epitaxial growth
liquid phase
phase epitaxial
inas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55146230A
Other languages
Japanese (ja)
Inventor
Kazuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55146230A priority Critical patent/JPS5771129A/en
Publication of JPS5771129A publication Critical patent/JPS5771129A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions

Landscapes

  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain solution of homogeneous composition by forming an epitaxial growth solution through addition and heating of In and V family element in a condition that Al makes contact with Ga solution. CONSTITUTION:Al and Ga are placed in a crusible and Al makes contact with Ga solution. In such a condition, the solution is prepared through addition and heating of InAs and In. The growth solution is cooled 0.5 deg.C/m and is displaced onto InP substrate to form an epitaxial growth layer, and is removed from the substrate at 689 deg.C. According to the above constitution, since the Al is molten homogeneously in the solution, a lattice matching can be obtained and Al, Ga and InAs having predetermined composition also be obtained.
JP55146230A 1980-10-21 1980-10-21 Liquid phase epitaxial growth Pending JPS5771129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55146230A JPS5771129A (en) 1980-10-21 1980-10-21 Liquid phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55146230A JPS5771129A (en) 1980-10-21 1980-10-21 Liquid phase epitaxial growth

Publications (1)

Publication Number Publication Date
JPS5771129A true JPS5771129A (en) 1982-05-01

Family

ID=15403044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55146230A Pending JPS5771129A (en) 1980-10-21 1980-10-21 Liquid phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5771129A (en)

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