JPS5772330A - Plasma etching - Google Patents

Plasma etching

Info

Publication number
JPS5772330A
JPS5772330A JP14858580A JP14858580A JPS5772330A JP S5772330 A JPS5772330 A JP S5772330A JP 14858580 A JP14858580 A JP 14858580A JP 14858580 A JP14858580 A JP 14858580A JP S5772330 A JPS5772330 A JP S5772330A
Authority
JP
Japan
Prior art keywords
processed
substrates
top end
substrate
conductive board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14858580A
Other languages
Japanese (ja)
Other versions
JPH0131292B2 (en
Inventor
Hisao Haruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14858580A priority Critical patent/JPS5772330A/en
Publication of JPS5772330A publication Critical patent/JPS5772330A/en
Publication of JPH0131292B2 publication Critical patent/JPH0131292B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To make etching uniform by a method wherein insulation boards with conductive films are placed on the back side of substrates to be processed and etching process is performed, so that generation of plasma concentration in the region touching the substrates to be processed is suppressed.
CONSTITUTION: Two quartz boards 14 to which corrosion resistant metal films 13 are attached are coupled with such an angle that they can hold substrates 15 to be processed, so that a substrate holding jig 17 is composed. The substrates 15 to be processed are mounted in substrate mounting grooves 16 provided on the quartz boards 14 at the lower position than the top end of the board and the substrate holding jig 17 is brought into a plasma etching vessel and ashing of negative resist is performed. With above configuration electric field concentrates to the top end of the conductive board nearest to an upper electrode which is a supply side electrode of a plasma etching equipment through the metal film of that conductive board and the plasma concentration is generated near the top end of the conductive board, so that it is not generated in the region touching to the substrate to be processed.
COPYRIGHT: (C)1982,JPO&Japio
JP14858580A 1980-10-23 1980-10-23 Plasma etching Granted JPS5772330A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14858580A JPS5772330A (en) 1980-10-23 1980-10-23 Plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14858580A JPS5772330A (en) 1980-10-23 1980-10-23 Plasma etching

Publications (2)

Publication Number Publication Date
JPS5772330A true JPS5772330A (en) 1982-05-06
JPH0131292B2 JPH0131292B2 (en) 1989-06-26

Family

ID=15456029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14858580A Granted JPS5772330A (en) 1980-10-23 1980-10-23 Plasma etching

Country Status (1)

Country Link
JP (1) JPS5772330A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986002289A1 (en) * 1984-10-19 1986-04-24 Tetron, Inc. Reactor apparatus for semiconductor wafer processing

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021218A (en) * 1973-06-29 1975-03-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021218A (en) * 1973-06-29 1975-03-06

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986002289A1 (en) * 1984-10-19 1986-04-24 Tetron, Inc. Reactor apparatus for semiconductor wafer processing
US4694779A (en) * 1984-10-19 1987-09-22 Tetron, Inc. Reactor apparatus for semiconductor wafer processing

Also Published As

Publication number Publication date
JPH0131292B2 (en) 1989-06-26

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