JPS5511312A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5511312A
JPS5511312A JP8301978A JP8301978A JPS5511312A JP S5511312 A JPS5511312 A JP S5511312A JP 8301978 A JP8301978 A JP 8301978A JP 8301978 A JP8301978 A JP 8301978A JP S5511312 A JPS5511312 A JP S5511312A
Authority
JP
Japan
Prior art keywords
sio
base
film
region
mosic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8301978A
Other languages
Japanese (ja)
Inventor
Akira Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8301978A priority Critical patent/JPS5511312A/en
Publication of JPS5511312A publication Critical patent/JPS5511312A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To simplify the manufacture of MOSIC, by forming field oxide film in the neighborhood of an island region by the thermal oxidation method, practically eliminating the occurrence of crater and reducing the boundary surface charge density.
CONSTITUTION: Selective ethcing is operated on silicon base 10, and leaving island region 10A, its neighboring region of the base surface is removed. After this, the entire surface of base 10A is oxidized, and the upper and side surfaces of region 10A and the etched surface are covered with SiO2 film 12. Next, a photoresist is coated flat on the surface of base 10A, and the coated surface is uniformly etched so that SiO2 film 12 is exposed on base 10A. Next, with the remaining film made as mask layer 14, selective etching is operated on SiO2, and SiO2 projected on region 10A is removed. Thus, the surface of base 10A is flattened. After this processing, mask layer 14 is removed. Then, by using a mask such as a photoresist on the entire surface of SiO2 film 12 again, thin SiO2 film is removed and the surface of region 10A is exposed. Subsequently, an insulation gate is formed, and thereby the manufacture of MOSIC is simplified.
COPYRIGHT: (C)1980,JPO&Japio
JP8301978A 1978-07-10 1978-07-10 Manufacturing method of semiconductor device Pending JPS5511312A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8301978A JPS5511312A (en) 1978-07-10 1978-07-10 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8301978A JPS5511312A (en) 1978-07-10 1978-07-10 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5511312A true JPS5511312A (en) 1980-01-26

Family

ID=13790520

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8301978A Pending JPS5511312A (en) 1978-07-10 1978-07-10 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5511312A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120066879A1 (en) * 2010-09-20 2012-03-22 Daeschner Bernd P Assembly facilitation apparatus and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49135583A (en) * 1973-04-28 1974-12-27
JPS5247679A (en) * 1975-10-14 1977-04-15 Ibm Method of flattening insulating layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49135583A (en) * 1973-04-28 1974-12-27
JPS5247679A (en) * 1975-10-14 1977-04-15 Ibm Method of flattening insulating layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120066879A1 (en) * 2010-09-20 2012-03-22 Daeschner Bernd P Assembly facilitation apparatus and method

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