JPS5772333A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5772333A
JPS5772333A JP55148582A JP14858280A JPS5772333A JP S5772333 A JPS5772333 A JP S5772333A JP 55148582 A JP55148582 A JP 55148582A JP 14858280 A JP14858280 A JP 14858280A JP S5772333 A JPS5772333 A JP S5772333A
Authority
JP
Japan
Prior art keywords
layer
film
amorphous
oxidized
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55148582A
Other languages
English (en)
Inventor
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55148582A priority Critical patent/JPS5772333A/ja
Publication of JPS5772333A publication Critical patent/JPS5772333A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Formation Of Insulating Films (AREA)
JP55148582A 1980-10-23 1980-10-23 Manufacture of semiconductor device Pending JPS5772333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148582A JPS5772333A (en) 1980-10-23 1980-10-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148582A JPS5772333A (en) 1980-10-23 1980-10-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5772333A true JPS5772333A (en) 1982-05-06

Family

ID=15455960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148582A Pending JPS5772333A (en) 1980-10-23 1980-10-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5772333A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931068A (ja) * 1982-08-13 1984-02-18 Seiko Epson Corp 半導体集積回路装置の製造方法
JPS59127841A (ja) * 1983-01-12 1984-07-23 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS624375A (ja) * 1985-06-29 1987-01-10 Sony Corp 半導体装置
JPS63502470A (ja) * 1986-02-25 1988-09-14 アメリカン　テレフォン　アンド　テレグラフ　カムパニ− 誘電体薄層を有する装置の製造方法
JPH02111035A (ja) * 1988-10-20 1990-04-24 Fuji Xerox Co Ltd ポリシリコン薄膜トランジスタの製造方法
JP2014220364A (ja) * 2013-05-08 2014-11-20 株式会社豊田自動織機 半導体基板の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991189A (ja) * 1972-12-29 1974-08-30
JPS5349970A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991189A (ja) * 1972-12-29 1974-08-30
JPS5349970A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931068A (ja) * 1982-08-13 1984-02-18 Seiko Epson Corp 半導体集積回路装置の製造方法
JPS59127841A (ja) * 1983-01-12 1984-07-23 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS624375A (ja) * 1985-06-29 1987-01-10 Sony Corp 半導体装置
JPS63502470A (ja) * 1986-02-25 1988-09-14 アメリカン　テレフォン　アンド　テレグラフ　カムパニ− 誘電体薄層を有する装置の製造方法
JPH02111035A (ja) * 1988-10-20 1990-04-24 Fuji Xerox Co Ltd ポリシリコン薄膜トランジスタの製造方法
JP2014220364A (ja) * 2013-05-08 2014-11-20 株式会社豊田自動織機 半導体基板の製造方法

Similar Documents

Publication Publication Date Title
JPS5772333A (en) Manufacture of semiconductor device
JPS57154855A (en) Manufacture of semiconductor device
JPS56135975A (en) Manufacture of semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS56111241A (en) Preparation of semiconductor device
JPS559415A (en) Semiconductor manufacturing method
JPS571243A (en) Manufacture of semiconductor device
JPS5633841A (en) Manufacture of semiconductor device
JPS54117690A (en) Production of semiconductor device
JPS5779641A (en) Manufacture of semiconductor device
JPS5687342A (en) Manufacture of semiconductor device
JPS5475275A (en) Manufacture of semiconductor device
JPS647566A (en) Manufacture of thin film transistor
JPS5513964A (en) Method of manufacturing semiconductor device
JPS55130140A (en) Fabricating method of semiconductor device
JPS6430244A (en) Manufacture of semiconductor device
JPS5489594A (en) Manufacture for integrated circuit
JPS5513951A (en) Manufacturing method of semiconductor device
JPS5759348A (en) Manufacture of semiconductor device
JPS6423529A (en) Manufacture of semiconductor device
JPS56111265A (en) Manufacture of semiconductor device
JPS5513995A (en) Method of producing a semiconductor device
JPS57181137A (en) Manufacture of semiconductor device
JPS5511312A (en) Manufacturing method of semiconductor device
JPS5754345A (ja) Handotaisochinoseizohoho