JPS5773741A - Photomask - Google Patents

Photomask

Info

Publication number
JPS5773741A
JPS5773741A JP14895880A JP14895880A JPS5773741A JP S5773741 A JPS5773741 A JP S5773741A JP 14895880 A JP14895880 A JP 14895880A JP 14895880 A JP14895880 A JP 14895880A JP S5773741 A JPS5773741 A JP S5773741A
Authority
JP
Japan
Prior art keywords
layer
light shielding
photomask
chromium oxide
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14895880A
Other languages
Japanese (ja)
Other versions
JPS623415B2 (en
Inventor
Teruo Kuno
Nobuhiro Hashimoto
Ryohei Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP14895880A priority Critical patent/JPS5773741A/en
Publication of JPS5773741A publication Critical patent/JPS5773741A/en
Publication of JPS623415B2 publication Critical patent/JPS623415B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To provide a high light shielding property to a light shielding layer with a 3-layer structure, to increase the adhesion of the layer to a substrate and to prevent peeling during use by adding a little chromium oxide to the chromium layer of the light shielding layer together with merallic Cr. CONSTITUTION:A low reflection layer 3 is formed on a transparent substrate 4, and on the layer 3 a metallic Cr layer 6 contg. a little chromium oxide is formed in >=800Angstrom thickness by vapor deposition or other method using a mixture of metallic Cr with chromium oxide in a prescribed ratio. A low reflection layer 2 is further formed to manufacture a photomask having a light shielding layer with the 3-layer structure. The light shielding layer has a high light shielding property with >=4 transmission density and high adhesion to the substrate, and peeling is not caused even if the photomask is used repeatedly. Accordingly, this photomask is used as a photomask with high durability and high resolution for manufacturing a precise pattern for a semiconductor integrated circuit, etc.
JP14895880A 1980-10-24 1980-10-24 Photomask Granted JPS5773741A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14895880A JPS5773741A (en) 1980-10-24 1980-10-24 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14895880A JPS5773741A (en) 1980-10-24 1980-10-24 Photomask

Publications (2)

Publication Number Publication Date
JPS5773741A true JPS5773741A (en) 1982-05-08
JPS623415B2 JPS623415B2 (en) 1987-01-24

Family

ID=15464457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14895880A Granted JPS5773741A (en) 1980-10-24 1980-10-24 Photomask

Country Status (1)

Country Link
JP (1) JPS5773741A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119353A (en) * 1982-12-27 1984-07-10 Hoya Corp Photomask blank
JPS61235819A (en) * 1985-04-12 1986-10-21 Hitachi Ltd Liquid crystal display element
JPS6229139A (en) * 1985-07-31 1987-02-07 Hitachi Ltd Pattern transfer mask and application thereof
JPS62293511A (en) * 1986-06-12 1987-12-21 Sumitomo Special Metals Co Ltd Magnetic recording medium
US4758085A (en) * 1985-10-16 1988-07-19 Bertin & Cie Optical fiber spectrometer/colorimeter apparatus
CN115268202A (en) * 2021-04-30 2022-11-01 Skc索密思株式会社 Photomask blank, photomask and method for manufacturing semiconductor device
JP2023088855A (en) * 2021-12-15 2023-06-27 エスケー エンパルス カンパニー リミテッド Blank mask and photomask using it

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323277A (en) * 1976-08-14 1978-03-03 Konishiroku Photo Ind Co Ltd Photomasking material and photomask

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323277A (en) * 1976-08-14 1978-03-03 Konishiroku Photo Ind Co Ltd Photomasking material and photomask

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119353A (en) * 1982-12-27 1984-07-10 Hoya Corp Photomask blank
JPS61235819A (en) * 1985-04-12 1986-10-21 Hitachi Ltd Liquid crystal display element
JPS6229139A (en) * 1985-07-31 1987-02-07 Hitachi Ltd Pattern transfer mask and application thereof
US4758085A (en) * 1985-10-16 1988-07-19 Bertin & Cie Optical fiber spectrometer/colorimeter apparatus
JPS62293511A (en) * 1986-06-12 1987-12-21 Sumitomo Special Metals Co Ltd Magnetic recording medium
CN115268202A (en) * 2021-04-30 2022-11-01 Skc索密思株式会社 Photomask blank, photomask and method for manufacturing semiconductor device
US20220350238A1 (en) * 2021-04-30 2022-11-03 Skc Solmics Co., Ltd. Photomask blank, photomask, and manufacturing method of semiconductor element
JP2022171587A (en) * 2021-04-30 2022-11-11 エスケーシー ソルミックス カンパニー，リミテッド Photomask blank, photomask, and method for manufacturing semiconductor device
CN115268202B (en) * 2021-04-30 2025-10-10 Sk恩普士有限公司 Photomask blank, photomask, and method for manufacturing semiconductor device
JP2023088855A (en) * 2021-12-15 2023-06-27 エスケー エンパルス カンパニー リミテッド Blank mask and photomask using it

Also Published As

Publication number Publication date
JPS623415B2 (en) 1987-01-24

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