JPS5773965A - Switched capcitor integrator - Google Patents
Switched capcitor integratorInfo
- Publication number
- JPS5773965A JPS5773965A JP55150956A JP15095680A JPS5773965A JP S5773965 A JPS5773965 A JP S5773965A JP 55150956 A JP55150956 A JP 55150956A JP 15095680 A JP15095680 A JP 15095680A JP S5773965 A JPS5773965 A JP S5773965A
- Authority
- JP
- Japan
- Prior art keywords
- integrator
- polycrystalline
- layer
- switched
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To decrease parasitic capacitance and eliminate backgate effect in order to make the characteristics of a switched capacitor integrator approach to ideal ones, by a method wherein a switching transistor of the integrator is constituted on a field insulating layer, with a polycrystalline Si layer used as a channel part. CONSTITUTION:In an integrator comprising transistors 1, 2 switched by means of clock signals, a feedback capacitor CF and an operational amplifier 3, a transistor 36 with polycrystalline Si as a channel is employed for switching. The transistor 36 is formed in the process for manufacturing a capacitor 37 and an ordinary. FET37 by means of the double layer polycrystalline Si technique. In other words, a channel part 28, a source and drain 26, 27 are formed in the first layer polycrystaline Si16 on a field film by using a gate 23 of the second layer polycrystalline Si as a mask. Thereby, because the junction capacitance with the substrate is eliminated, parasitic capacitance Cp can be decreased, so that capacitance ratio CI/CF can be set accurately. In addition, because the channel part 28 is floating, backgate effect can be eliminated, so that the dynamic range can be widened.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55150956A JPS5773965A (en) | 1980-10-28 | 1980-10-28 | Switched capcitor integrator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55150956A JPS5773965A (en) | 1980-10-28 | 1980-10-28 | Switched capcitor integrator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5773965A true JPS5773965A (en) | 1982-05-08 |
Family
ID=15508099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55150956A Pending JPS5773965A (en) | 1980-10-28 | 1980-10-28 | Switched capcitor integrator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5773965A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0499375U (en) * | 1991-09-12 | 1992-08-27 | ||
| JPH04115765U (en) * | 1991-03-22 | 1992-10-14 | 三洋電機株式会社 | DC connector |
| WO1996027905A1 (en) * | 1995-03-06 | 1996-09-12 | Hitachi, Ltd. | High-frequency amplifier circuit |
| US5682060A (en) * | 1995-02-16 | 1997-10-28 | Texas Instruments Incorporated | Process for manufacturing integrated circuit capacitors and resistors and the capacitors and resistors |
-
1980
- 1980-10-28 JP JP55150956A patent/JPS5773965A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04115765U (en) * | 1991-03-22 | 1992-10-14 | 三洋電機株式会社 | DC connector |
| JPH0499375U (en) * | 1991-09-12 | 1992-08-27 | ||
| US5682060A (en) * | 1995-02-16 | 1997-10-28 | Texas Instruments Incorporated | Process for manufacturing integrated circuit capacitors and resistors and the capacitors and resistors |
| WO1996027905A1 (en) * | 1995-03-06 | 1996-09-12 | Hitachi, Ltd. | High-frequency amplifier circuit |
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