JPS577967A - Structure of mos transistor and manufacture thereof - Google Patents

Structure of mos transistor and manufacture thereof

Info

Publication number
JPS577967A
JPS577967A JP8209380A JP8209380A JPS577967A JP S577967 A JPS577967 A JP S577967A JP 8209380 A JP8209380 A JP 8209380A JP 8209380 A JP8209380 A JP 8209380A JP S577967 A JPS577967 A JP S577967A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
gate electrode
consisted
single crystal
drain regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8209380A
Other languages
Japanese (ja)
Inventor
Yoshihide Asai
Shintaro Ushio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP8209380A priority Critical patent/JPS577967A/en
Publication of JPS577967A publication Critical patent/JPS577967A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Abstract

PURPOSE:To enable to attain high integration and high density of MOS transistors by a method wherein a source and a drain regions are fomed with single crystal silicon layers on a semiconductor substrate, and a gate electrode is formed with polycrystalline silicon on the substrate. CONSTITUTION:The inversely conductive source and drain regions 7 consisted of single crystal silicon layers are formed on the uniconductive semiconductor substrate 1. The gate electrode 4 consisted of polycrystalline silicon is formed on the semiconductor substrate 1. The gate electrode 4 is covered with an oxide film 5. Moreover field oxide films 2 to separate between elements are formed on the semiconductor substrate 1.
JP8209380A 1980-06-19 1980-06-19 Structure of mos transistor and manufacture thereof Pending JPS577967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8209380A JPS577967A (en) 1980-06-19 1980-06-19 Structure of mos transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8209380A JPS577967A (en) 1980-06-19 1980-06-19 Structure of mos transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS577967A true JPS577967A (en) 1982-01-16

Family

ID=13764811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8209380A Pending JPS577967A (en) 1980-06-19 1980-06-19 Structure of mos transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS577967A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6490559A (en) * 1987-10-01 1989-04-07 Nec Corp Insulated-gate semiconductor device and manufacture thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342567A (en) * 1976-09-30 1978-04-18 Oki Electric Ind Co Ltd Semiconductor device and its production
JPS5491069A (en) * 1977-12-28 1979-07-19 Nec Corp Mos field effect transistor
JPS5575225A (en) * 1978-11-27 1980-06-06 Rca Corp Method of lowering specific resistance of doped polycrystalline silicon film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342567A (en) * 1976-09-30 1978-04-18 Oki Electric Ind Co Ltd Semiconductor device and its production
JPS5491069A (en) * 1977-12-28 1979-07-19 Nec Corp Mos field effect transistor
JPS5575225A (en) * 1978-11-27 1980-06-06 Rca Corp Method of lowering specific resistance of doped polycrystalline silicon film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6490559A (en) * 1987-10-01 1989-04-07 Nec Corp Insulated-gate semiconductor device and manufacture thereof

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