JPS5773974A - Manufacture of most type semiconductor device - Google Patents

Manufacture of most type semiconductor device

Info

Publication number
JPS5773974A
JPS5773974A JP55149351A JP14935180A JPS5773974A JP S5773974 A JPS5773974 A JP S5773974A JP 55149351 A JP55149351 A JP 55149351A JP 14935180 A JP14935180 A JP 14935180A JP S5773974 A JPS5773974 A JP S5773974A
Authority
JP
Japan
Prior art keywords
film
layer
recess
gate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55149351A
Other languages
English (en)
Inventor
Takashi Saigo
Akira Kurosawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55149351A priority Critical patent/JPS5773974A/ja
Publication of JPS5773974A publication Critical patent/JPS5773974A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP55149351A 1980-10-27 1980-10-27 Manufacture of most type semiconductor device Pending JPS5773974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55149351A JPS5773974A (en) 1980-10-27 1980-10-27 Manufacture of most type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55149351A JPS5773974A (en) 1980-10-27 1980-10-27 Manufacture of most type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5773974A true JPS5773974A (en) 1982-05-08

Family

ID=15473217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55149351A Pending JPS5773974A (en) 1980-10-27 1980-10-27 Manufacture of most type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5773974A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999771A (ja) * 1982-11-29 1984-06-08 Nec Corp Ｍｏｓ型半導体装置及びその製造方法
JPS60227475A (ja) * 1984-04-25 1985-11-12 Mitsubishi Electric Corp Ｍｏｓ形半導体装置の製造方法
US7787847B2 (en) * 2001-01-24 2010-08-31 St-Ericsson Sa Front end and high frequency receiver having quadrature low noise amplifier
CN103377904A (zh) * 2012-04-28 2013-10-30 上海华虹Nec电子有限公司 一种多晶硅沟槽回刻蚀方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999771A (ja) * 1982-11-29 1984-06-08 Nec Corp Ｍｏｓ型半導体装置及びその製造方法
JPS60227475A (ja) * 1984-04-25 1985-11-12 Mitsubishi Electric Corp Ｍｏｓ形半導体装置の製造方法
US7787847B2 (en) * 2001-01-24 2010-08-31 St-Ericsson Sa Front end and high frequency receiver having quadrature low noise amplifier
US8145176B2 (en) 2001-01-24 2012-03-27 St-Ericsson Sa Front end and high frequency receiver having quadrature low noise amplifier
CN103377904A (zh) * 2012-04-28 2013-10-30 上海华虹Nec电子有限公司 一种多晶硅沟槽回刻蚀方法

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