JPS5775439A - Judgement of stability of semiconductor device - Google Patents

Judgement of stability of semiconductor device

Info

Publication number
JPS5775439A
JPS5775439A JP15147080A JP15147080A JPS5775439A JP S5775439 A JPS5775439 A JP S5775439A JP 15147080 A JP15147080 A JP 15147080A JP 15147080 A JP15147080 A JP 15147080A JP S5775439 A JPS5775439 A JP S5775439A
Authority
JP
Japan
Prior art keywords
traps
curve
bias voltage
voltage
transfers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15147080A
Other languages
Japanese (ja)
Inventor
Fumio Ichikawa
Katsuhiko Oimura
Shintaro Ushio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP15147080A priority Critical patent/JPS5775439A/en
Publication of JPS5775439A publication Critical patent/JPS5775439A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To judge the stability of a semiconductor device from the quantity of variation of a flat band voltage by a method wherein the energy of carrier is enhanced by light, and the device is treated for the prescribed time in the room temperature applying a bias voltage. CONSTITUTION:The capacitance C-voltage V characteristic curve a of an MOS diode consisting of an Si substrate 5, an SiO2 film 6, electrodes 7 is obtained. Then a bias voltage is applied irradiating the MOS diode with a W lamp 9. Whe doner type traps exist in the insulating film 6, electrons are discharged from the traps carying positive electric charge by the application of a negative bias voltage, and C-V characteristic transfers in the negative direction as shown with the c curve. When a positive bias voltage is applied, the curve thereof transfers in the positive direction as shown with the b curve. Therefore the flat band voltage are obtained from respective C-V characteristics, and the unstable component owing to the traps can be measured from quantity of variation. At the neighborhood of the room temperature, almost no movable ion of Na<+>, etc. in the insulating film transfers, the unstable component owing to ions thereof can be separated, and only the unstable component owing to the traps can be measured.
JP15147080A 1980-10-30 1980-10-30 Judgement of stability of semiconductor device Pending JPS5775439A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15147080A JPS5775439A (en) 1980-10-30 1980-10-30 Judgement of stability of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15147080A JPS5775439A (en) 1980-10-30 1980-10-30 Judgement of stability of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5775439A true JPS5775439A (en) 1982-05-12

Family

ID=15519217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15147080A Pending JPS5775439A (en) 1980-10-30 1980-10-30 Judgement of stability of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5775439A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63151035A (en) * 1986-12-16 1988-06-23 Matsushita Electric Ind Co Ltd Method for testing deterioration of semiconductor device
EP0704890A3 (en) * 1994-09-30 1997-05-02 Shinetsu Handotai Kk Method for evaluating an MIS semiconductor device
JP2003273183A (en) * 2002-03-15 2003-09-26 Solid State Measurements Inc High-speed measurement method of threshold voltage and dopant concentration
JP2021057584A (en) * 2019-09-24 2021-04-08 東レ株式会社 Capacitance-voltage characteristic measurement method and capacitance-voltage characteristic measurement device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54130882A (en) * 1978-04-03 1979-10-11 Cho Lsi Gijutsu Kenkyu Kumiai Method of inspecting semiconductor surface

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54130882A (en) * 1978-04-03 1979-10-11 Cho Lsi Gijutsu Kenkyu Kumiai Method of inspecting semiconductor surface

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63151035A (en) * 1986-12-16 1988-06-23 Matsushita Electric Ind Co Ltd Method for testing deterioration of semiconductor device
EP0704890A3 (en) * 1994-09-30 1997-05-02 Shinetsu Handotai Kk Method for evaluating an MIS semiconductor device
US5701088A (en) * 1994-09-30 1997-12-23 Shin-Etsu Handotai Co., Ltd Method of evaluating a MIS-type semiconductor device
JP2003273183A (en) * 2002-03-15 2003-09-26 Solid State Measurements Inc High-speed measurement method of threshold voltage and dopant concentration
JP2021057584A (en) * 2019-09-24 2021-04-08 東レ株式会社 Capacitance-voltage characteristic measurement method and capacitance-voltage characteristic measurement device

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