JPS5776829A - Manufacture of semiconductor substrate - Google Patents

Manufacture of semiconductor substrate

Info

Publication number
JPS5776829A
JPS5776829A JP55153127A JP15312780A JPS5776829A JP S5776829 A JPS5776829 A JP S5776829A JP 55153127 A JP55153127 A JP 55153127A JP 15312780 A JP15312780 A JP 15312780A JP S5776829 A JPS5776829 A JP S5776829A
Authority
JP
Japan
Prior art keywords
single crystal
crystal silicon
substrate
film
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55153127A
Other languages
English (en)
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55153127A priority Critical patent/JPS5776829A/ja
Publication of JPS5776829A publication Critical patent/JPS5776829A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12Preparing bulk and homogeneous wafers

Landscapes

  • Recrystallisation Techniques (AREA)
JP55153127A 1980-10-31 1980-10-31 Manufacture of semiconductor substrate Pending JPS5776829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55153127A JPS5776829A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55153127A JPS5776829A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5776829A true JPS5776829A (en) 1982-05-14

Family

ID=15555565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55153127A Pending JPS5776829A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5776829A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61244019A (ja) * 1985-04-22 1986-10-30 Agency Of Ind Science & Technol 熔融再結晶化膜の処理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137979A (en) * 1976-05-14 1977-11-17 Fujitsu Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137979A (en) * 1976-05-14 1977-11-17 Fujitsu Ltd Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61244019A (ja) * 1985-04-22 1986-10-30 Agency Of Ind Science & Technol 熔融再結晶化膜の処理方法

Similar Documents

Publication Publication Date Title
JPS54110783A (en) Semiconductor substrate and its manufacture
JPS5567142A (en) Method of manufacturing wafer silicon semiconductor part having negative bevel unit
JPS5776829A (en) Manufacture of semiconductor substrate
JPS5333050A (en) Production of semiconductor element
JPS57180148A (en) Manufacture of semiconductor device having dielectric isolation structure
JPS55113332A (en) Manufacture of wafer
GB2160360A (en) Method of fabricating solar cells
JPS5721826A (en) Manufacture of semiconductor single crystal wafer
JPS567434A (en) Manufacture of semiconductor device
JPS6437025A (en) Manufacture of semiconductor device
JPS5730337A (en) Formation of surface protecting film for semiconductor
JPS56157019A (en) Manufacture of substrate for semiconductor device
JPS6482814A (en) Piezoelectric body monocrystal wafer and its manufacture
JPS5621337A (en) Manufacture of semiconductor element
JPS5270752A (en) Manufacture of semiconductor device
JPS56144544A (en) Manufacture of semiconductor device
JPS5279869A (en) Semiconductor substrate
JPS6445168A (en) Manufacture of high breakdown voltage semiconductor element
JPS57113290A (en) Manufacture of mis type schottky diode
JPS56114951A (en) Method for correcting mask pattern defect
JPS5461867A (en) Production of semiconductor wafer
JPS51140470A (en) Method of cutting semiconductor crystal
JPS52155047A (en) Grinding method of semiconductor crystal wafer
JPS5793545A (en) Manufacture of semiconductor device
SU1056815A1 (ru) Способ изготовления защитных свинцово-силикатных пленок на поверхности кремния