JPS5776832A - Method for forming palladium silicide - Google Patents

Method for forming palladium silicide

Info

Publication number
JPS5776832A
JPS5776832A JP55152252A JP15225280A JPS5776832A JP S5776832 A JPS5776832 A JP S5776832A JP 55152252 A JP55152252 A JP 55152252A JP 15225280 A JP15225280 A JP 15225280A JP S5776832 A JPS5776832 A JP S5776832A
Authority
JP
Japan
Prior art keywords
palladium
palladium layer
silicon
oxide film
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55152252A
Other languages
English (en)
Inventor
Shigeru Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55152252A priority Critical patent/JPS5776832A/ja
Publication of JPS5776832A publication Critical patent/JPS5776832A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides

Landscapes

  • Silicon Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
JP55152252A 1980-10-31 1980-10-31 Method for forming palladium silicide Pending JPS5776832A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55152252A JPS5776832A (en) 1980-10-31 1980-10-31 Method for forming palladium silicide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55152252A JPS5776832A (en) 1980-10-31 1980-10-31 Method for forming palladium silicide

Publications (1)

Publication Number Publication Date
JPS5776832A true JPS5776832A (en) 1982-05-14

Family

ID=15536413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55152252A Pending JPS5776832A (en) 1980-10-31 1980-10-31 Method for forming palladium silicide

Country Status (1)

Country Link
JP (1) JPS5776832A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006339578A (ja) * 2005-06-06 2006-12-14 Renesas Technology Corp 半導体装置およびその製造方法
WO2013048270A1 (en) 2011-09-26 2013-04-04 Instytut Tele- I Radiotechniczny Method for forming palladium silicide nanowires

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006339578A (ja) * 2005-06-06 2006-12-14 Renesas Technology Corp 半導体装置およびその製造方法
WO2013048270A1 (en) 2011-09-26 2013-04-04 Instytut Tele- I Radiotechniczny Method for forming palladium silicide nanowires

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