JPS5776834A - Method of electron beam exposure - Google Patents

Method of electron beam exposure

Info

Publication number
JPS5776834A
JPS5776834A JP55152508A JP15250880A JPS5776834A JP S5776834 A JPS5776834 A JP S5776834A JP 55152508 A JP55152508 A JP 55152508A JP 15250880 A JP15250880 A JP 15250880A JP S5776834 A JPS5776834 A JP S5776834A
Authority
JP
Japan
Prior art keywords
exposing
area
electron beam
desired area
overlapped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55152508A
Other languages
Japanese (ja)
Inventor
Koichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55152508A priority Critical patent/JPS5776834A/en
Publication of JPS5776834A publication Critical patent/JPS5776834A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To improve the manufacturing yield rate and reliability in the exposing process of desired area, by applying the exposing process on the desired region with such an exposing size that a part of the desired area is overlapped with a part of the adiacent area to be exposed. CONSTITUTION:The electron beam 2 which is irradiated from an electron gun 1 comprising a cathode, a grid, and an anode is shaped into a square cross section by a stop 3, passes through a condenser lens 4, and is deflected by deflecting plate 5X and 5Y. The square beam goes through an L shaped stopping plate 6, deflecting plate 7X and 7Y, and a condenser lens 8, and an intended position on semiconductor substrate 9 is exposed. In this case, the exposing size is such that a part of the exposing area, which is adjacent to the desired area, is overlapped with the desired area. In this way the exposing process is performed on the desired exposing area.
JP55152508A 1980-10-30 1980-10-30 Method of electron beam exposure Pending JPS5776834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55152508A JPS5776834A (en) 1980-10-30 1980-10-30 Method of electron beam exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55152508A JPS5776834A (en) 1980-10-30 1980-10-30 Method of electron beam exposure

Publications (1)

Publication Number Publication Date
JPS5776834A true JPS5776834A (en) 1982-05-14

Family

ID=15541977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55152508A Pending JPS5776834A (en) 1980-10-30 1980-10-30 Method of electron beam exposure

Country Status (1)

Country Link
JP (1) JPS5776834A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6211229A (en) * 1985-07-09 1987-01-20 Fujitsu Ltd Electron-beam exposure method
JPH0330313A (en) * 1989-06-27 1991-02-08 Matsushita Electric Ind Co Ltd Fine pattern formation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6211229A (en) * 1985-07-09 1987-01-20 Fujitsu Ltd Electron-beam exposure method
JPH0330313A (en) * 1989-06-27 1991-02-08 Matsushita Electric Ind Co Ltd Fine pattern formation

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