JPS5776841A - Etching method of silicon oxide film - Google Patents
Etching method of silicon oxide filmInfo
- Publication number
- JPS5776841A JPS5776841A JP15260380A JP15260380A JPS5776841A JP S5776841 A JPS5776841 A JP S5776841A JP 15260380 A JP15260380 A JP 15260380A JP 15260380 A JP15260380 A JP 15260380A JP S5776841 A JPS5776841 A JP S5776841A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon oxide
- electrons
- ion
- ion gun
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 7
- 229910052814 silicon oxide Inorganic materials 0.000 title abstract 6
- 238000005530 etching Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 8
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 125000001153 fluoro group Chemical group F* 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052753 mercury Inorganic materials 0.000 abstract 1
- 230000007935 neutral effect Effects 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15260380A JPS5776841A (en) | 1980-10-30 | 1980-10-30 | Etching method of silicon oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15260380A JPS5776841A (en) | 1980-10-30 | 1980-10-30 | Etching method of silicon oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5776841A true JPS5776841A (en) | 1982-05-14 |
Family
ID=15544011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15260380A Pending JPS5776841A (en) | 1980-10-30 | 1980-10-30 | Etching method of silicon oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5776841A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5966124A (ja) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | 表面処理方法および装置 |
| US4734158A (en) * | 1987-03-16 | 1988-03-29 | Hughes Aircraft Company | Molecular beam etching system and method |
-
1980
- 1980-10-30 JP JP15260380A patent/JPS5776841A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5966124A (ja) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | 表面処理方法および装置 |
| US4734158A (en) * | 1987-03-16 | 1988-03-29 | Hughes Aircraft Company | Molecular beam etching system and method |
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