JPS5776841A - Etching method of silicon oxide film - Google Patents

Etching method of silicon oxide film

Info

Publication number
JPS5776841A
JPS5776841A JP15260380A JP15260380A JPS5776841A JP S5776841 A JPS5776841 A JP S5776841A JP 15260380 A JP15260380 A JP 15260380A JP 15260380 A JP15260380 A JP 15260380A JP S5776841 A JPS5776841 A JP S5776841A
Authority
JP
Japan
Prior art keywords
oxide film
silicon oxide
electrons
ion
ion gun
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15260380A
Other languages
English (en)
Inventor
Yukinori Kuroki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15260380A priority Critical patent/JPS5776841A/ja
Publication of JPS5776841A publication Critical patent/JPS5776841A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP15260380A 1980-10-30 1980-10-30 Etching method of silicon oxide film Pending JPS5776841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15260380A JPS5776841A (en) 1980-10-30 1980-10-30 Etching method of silicon oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15260380A JPS5776841A (en) 1980-10-30 1980-10-30 Etching method of silicon oxide film

Publications (1)

Publication Number Publication Date
JPS5776841A true JPS5776841A (en) 1982-05-14

Family

ID=15544011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15260380A Pending JPS5776841A (en) 1980-10-30 1980-10-30 Etching method of silicon oxide film

Country Status (1)

Country Link
JP (1) JPS5776841A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966124A (ja) * 1982-10-08 1984-04-14 Hitachi Ltd 表面処理方法および装置
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966124A (ja) * 1982-10-08 1984-04-14 Hitachi Ltd 表面処理方法および装置
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method

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