JPS5776861A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS5776861A
JPS5776861A JP15259880A JP15259880A JPS5776861A JP S5776861 A JPS5776861 A JP S5776861A JP 15259880 A JP15259880 A JP 15259880A JP 15259880 A JP15259880 A JP 15259880A JP S5776861 A JPS5776861 A JP S5776861A
Authority
JP
Japan
Prior art keywords
manufacture
integrated circuit
semiconductor integrated
scribing line
yield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15259880A
Other languages
Japanese (ja)
Inventor
Masahiro Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15259880A priority Critical patent/JPS5776861A/en
Publication of JPS5776861A publication Critical patent/JPS5776861A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer

Landscapes

  • Dicing (AREA)

Abstract

PURPOSE:To improve the yield of manufacture by previously forming Al to a section shaping a scribing line of a main surface of a semiconductor substrate and removing a section corresponding to at least scribing line in Al2O3 obtained by oxidizing the Al. CONSTITUTION:Al is evaporated onto the Si substrate 1 through an insulating film 2, and changed into Al2O33 through oxidation at an anode, at least one part (the whole will do, also) of the section corresponding to the scribing line is removed, and the surface is scribed by means of a dicing saw. Accordingly, the effect of a crack generated at the time of scribing on the inside of the semiconductor substrate is removed, and yield is improved.
JP15259880A 1980-10-30 1980-10-30 Manufacture of semiconductor integrated circuit Pending JPS5776861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15259880A JPS5776861A (en) 1980-10-30 1980-10-30 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15259880A JPS5776861A (en) 1980-10-30 1980-10-30 Manufacture of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5776861A true JPS5776861A (en) 1982-05-14

Family

ID=15543918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15259880A Pending JPS5776861A (en) 1980-10-30 1980-10-30 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5776861A (en)

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