JPS5776880A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5776880A JPS5776880A JP15224980A JP15224980A JPS5776880A JP S5776880 A JPS5776880 A JP S5776880A JP 15224980 A JP15224980 A JP 15224980A JP 15224980 A JP15224980 A JP 15224980A JP S5776880 A JPS5776880 A JP S5776880A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- polycrystalline silicon
- drain
- saturation current
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000523 sample Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To measure values such as a drain saturation current or a pinch-off voltage easily by a method wherein a gate diffusion quantity is controlled while the drain saturation current is being measured using extensions of a polycrystalline silicon layer connected to a source and a drain region. CONSTITUTION:When gate regions 4'' are formed after a diffusion which forms a source and a drain region of an FET, polycrystalline silicon layers 12 which are connected to the gate regions 4'' through apertures on the source region in an insulation layer 10' which is formed on a surface of a substrate 1'' and polycrystalline silicon layers 13 which are connected to the gate regions 4'' through apertures on the drain region are respectively formed and extensions 12', 13' are formed on the insulating layer 10', so that a probe can contact the regions. With above configuration measurement of the values such as a drain saturation current or a pich-off voltage becomes easy and the accuracy of the gate diffusion can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15224980A JPS5776880A (en) | 1980-10-31 | 1980-10-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15224980A JPS5776880A (en) | 1980-10-31 | 1980-10-31 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5776880A true JPS5776880A (en) | 1982-05-14 |
Family
ID=15536350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15224980A Pending JPS5776880A (en) | 1980-10-31 | 1980-10-31 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5776880A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS492485A (en) * | 1972-04-19 | 1974-01-10 | ||
| JPS49123289A (en) * | 1973-03-28 | 1974-11-26 |
-
1980
- 1980-10-31 JP JP15224980A patent/JPS5776880A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS492485A (en) * | 1972-04-19 | 1974-01-10 | ||
| JPS49123289A (en) * | 1973-03-28 | 1974-11-26 |
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