JPS5778533A - Dry type development method - Google Patents
Dry type development methodInfo
- Publication number
- JPS5778533A JPS5778533A JP55154962A JP15496280A JPS5778533A JP S5778533 A JPS5778533 A JP S5778533A JP 55154962 A JP55154962 A JP 55154962A JP 15496280 A JP15496280 A JP 15496280A JP S5778533 A JPS5778533 A JP S5778533A
- Authority
- JP
- Japan
- Prior art keywords
- irradiation
- molecular weight
- electron beam
- resist
- under
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
PURPOSE:To form a high precision pattern, by executing electron beam patternwise exposure and ultraviolet ray irradiation on a positive type resist. CONSTITUTION:An electron beam positive type rsist decreasing in molecular weight under electron beam irradiation and increasing in molecular weight under its high irradiation is coated on a substrate, the resist is patternwise exposed to electron beams, and the unexposed part to the electron beams and the weakly exposed part are removed by irradiation of ultraviolet rays. In the figure, (a), (b), (c) represent changes of molecular weights of polymethyl methacrylate, polyhexafluoro- methacrylate, and polytetrafluoropropylmethacrylate, respectively, and in the case of the small irradiation region, the main chain is cut and the molecular weight decreases. Under the intense irradiation, cross-linking reaction occurs, the molecular weight increases, but the product is different in ractivity and physical property from the undeveloped part because of the side reactions different from the cross- linking reaction of the negative type resist. The parts except the electron beam exposed part are decomposed and removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55154962A JPS5778533A (en) | 1980-11-04 | 1980-11-04 | Dry type development method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55154962A JPS5778533A (en) | 1980-11-04 | 1980-11-04 | Dry type development method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5778533A true JPS5778533A (en) | 1982-05-17 |
| JPS647652B2 JPS647652B2 (en) | 1989-02-09 |
Family
ID=15595704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55154962A Granted JPS5778533A (en) | 1980-11-04 | 1980-11-04 | Dry type development method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5778533A (en) |
-
1980
- 1980-11-04 JP JP55154962A patent/JPS5778533A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS647652B2 (en) | 1989-02-09 |
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