JPS5779632A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5779632A
JPS5779632A JP55154576A JP15457680A JPS5779632A JP S5779632 A JPS5779632 A JP S5779632A JP 55154576 A JP55154576 A JP 55154576A JP 15457680 A JP15457680 A JP 15457680A JP S5779632 A JPS5779632 A JP S5779632A
Authority
JP
Japan
Prior art keywords
grow
silicon
epitaxial layer
layer
type silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55154576A
Other languages
Japanese (ja)
Inventor
Masaru Ihara
Yoshihiro Arimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55154576A priority Critical patent/JPS5779632A/en
Publication of JPS5779632A publication Critical patent/JPS5779632A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To obtain a semiconductor device with enhanced dilelctric withstand voltage and being enabled to intergrated even a high voltage circuit by a method wherein the device is made to have silicon/magnesia spinel/silicon structure. CONSTITUTION:A concave part 12 is formed on a silicon substrate 11, and a magnesia spinel (MgO.Al2O3) layer 13 is made to grow adhering on the substrate 11. Then a P<+> type silicon epitaxial layer 14 is made to grow on the upper face of the MgO.Al2O3 layer, and a P type silicon epitaxial layer 15 is made to grow the same on the upper face thereof. Moreover it is polished up to expose the P type silicon epitaxial layer, and the region in the convex region necessitating to be isolated is oxidized to form silicon dioxide layers 18.
JP55154576A 1980-11-05 1980-11-05 Manufacture of semiconductor device Pending JPS5779632A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55154576A JPS5779632A (en) 1980-11-05 1980-11-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55154576A JPS5779632A (en) 1980-11-05 1980-11-05 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5779632A true JPS5779632A (en) 1982-05-18

Family

ID=15587236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55154576A Pending JPS5779632A (en) 1980-11-05 1980-11-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5779632A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5484738A (en) * 1992-06-17 1996-01-16 International Business Machines Corporation Method of forming silicon on oxide semiconductor device structure for BiCMOS integrated circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5484738A (en) * 1992-06-17 1996-01-16 International Business Machines Corporation Method of forming silicon on oxide semiconductor device structure for BiCMOS integrated circuits

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