JPS57109367A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS57109367A
JPS57109367A JP55188802A JP18880280A JPS57109367A JP S57109367 A JPS57109367 A JP S57109367A JP 55188802 A JP55188802 A JP 55188802A JP 18880280 A JP18880280 A JP 18880280A JP S57109367 A JPS57109367 A JP S57109367A
Authority
JP
Japan
Prior art keywords
layer
oxide film
film
type
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55188802A
Other languages
Japanese (ja)
Other versions
JPS6037623B2 (en
Inventor
Yoshio Kono
Kouji Harada
Masahiko Denda
Koichi Nagasawa
Haruhiko Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55188802A priority Critical patent/JPS6037623B2/en
Publication of JPS57109367A publication Critical patent/JPS57109367A/en
Publication of JPS6037623B2 publication Critical patent/JPS6037623B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make possible high integration of memory cells on the same substrate surface by providing MOSFET three-dimentionally at the top of a memory capacitor. CONSTITUTION:An isolation oxide film 12, an N type active region 13 and a gate oxide film 14 are formed on a P type silicon semiconductor substrate 11. Then a film 14 on the region 13 is removed by etching and an N type epitaxial layer 15 is formed on the region 13 and a poly silicon layer 16 is formed on the film 12, 14. Platinum is vapored on the entire surface and then a Schottky barrier is formed by making the layer 16 Pt Si. An oxide film 17 is formed by treating the layer 16 and an N type polysilicon layer 18 is grown. The layer 18 is removed except a portion on the layer 15. Windows for taking out electrodes are made after forming an oxide film 17. Aluminum electrodes 19, 20 are made at the windows.
JP55188802A 1980-12-25 1980-12-25 semiconductor storage device Expired JPS6037623B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55188802A JPS6037623B2 (en) 1980-12-25 1980-12-25 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55188802A JPS6037623B2 (en) 1980-12-25 1980-12-25 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS57109367A true JPS57109367A (en) 1982-07-07
JPS6037623B2 JPS6037623B2 (en) 1985-08-27

Family

ID=16230053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55188802A Expired JPS6037623B2 (en) 1980-12-25 1980-12-25 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6037623B2 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4713678A (en) * 1984-12-07 1987-12-15 Texas Instruments Incorporated dRAM cell and method
US4797373A (en) * 1984-10-31 1989-01-10 Texas Instruments Incorporated Method of making dRAM cell with trench capacitor
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US4890145A (en) * 1984-08-31 1989-12-26 Texas Instruments Incorporated dRAM cell and array
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
US5838068A (en) * 1994-08-29 1998-11-17 Micron Technology, Inc. Integrated circuitry with interconnection pillar

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4890145A (en) * 1984-08-31 1989-12-26 Texas Instruments Incorporated dRAM cell and array
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US4797373A (en) * 1984-10-31 1989-01-10 Texas Instruments Incorporated Method of making dRAM cell with trench capacitor
US4713678A (en) * 1984-12-07 1987-12-15 Texas Instruments Incorporated dRAM cell and method
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
US5838068A (en) * 1994-08-29 1998-11-17 Micron Technology, Inc. Integrated circuitry with interconnection pillar
US6162721A (en) * 1994-08-29 2000-12-19 Micron Technology, Inc. Semiconductor processing methods

Also Published As

Publication number Publication date
JPS6037623B2 (en) 1985-08-27

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