JPS577970A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS577970A
JPS577970A JP8248680A JP8248680A JPS577970A JP S577970 A JPS577970 A JP S577970A JP 8248680 A JP8248680 A JP 8248680A JP 8248680 A JP8248680 A JP 8248680A JP S577970 A JPS577970 A JP S577970A
Authority
JP
Japan
Prior art keywords
input
drain region
equal
gate electrode
withstand voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8248680A
Other languages
Japanese (ja)
Other versions
JPS629228B2 (en
Inventor
Taiichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8248680A priority Critical patent/JPS577970A/en
Publication of JPS577970A publication Critical patent/JPS577970A/en
Publication of JPS629228B2 publication Critical patent/JPS629228B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To make an equal breakdown current to flow and to prevent generation of deterioration of junction of a semiconductor device when a surge input is applied by a method wherein the whole circumference of the drain region of an MOS transistor being connected with an input is surrounded with a gate electrode. CONSTITUTION:The drain region 104 of the MOS transistor being connected with the input is surrounded completely with the gate electrode 107 of the transistor, and is separated from the end of a field oxide film. Accordingly the parameters to decide the drain withstand voltage are equal, and because no contact with the channel stopper is exist extending over the whole circumference of the drain region to hold the withstand voltage to be conatant, the equal breakdown current can be obtained when the surge input is applied.
JP8248680A 1980-06-18 1980-06-18 Semiconductor device Granted JPS577970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8248680A JPS577970A (en) 1980-06-18 1980-06-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8248680A JPS577970A (en) 1980-06-18 1980-06-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS577970A true JPS577970A (en) 1982-01-16
JPS629228B2 JPS629228B2 (en) 1987-02-27

Family

ID=13775831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8248680A Granted JPS577970A (en) 1980-06-18 1980-06-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS577970A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4654690A (en) * 1984-04-05 1987-03-31 Mitsubishi Denki Kabushiki Kaisha Capacitive elements with reduced stray capacitance
JPS63202056A (en) * 1987-02-18 1988-08-22 Toshiba Corp Semiconductor integrated circuit
JPH05112317A (en) * 1991-10-21 1993-05-07 Yamagata Gravure:Kk Packaging of mat-like article
US5418097A (en) * 1992-04-07 1995-05-23 Fuji Xerox Co., Ltd. Color image recording method and apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01139214U (en) * 1988-03-16 1989-09-22

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4654690A (en) * 1984-04-05 1987-03-31 Mitsubishi Denki Kabushiki Kaisha Capacitive elements with reduced stray capacitance
JPS63202056A (en) * 1987-02-18 1988-08-22 Toshiba Corp Semiconductor integrated circuit
JPH05112317A (en) * 1991-10-21 1993-05-07 Yamagata Gravure:Kk Packaging of mat-like article
US5418097A (en) * 1992-04-07 1995-05-23 Fuji Xerox Co., Ltd. Color image recording method and apparatus

Also Published As

Publication number Publication date
JPS629228B2 (en) 1987-02-27

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