JPS577981A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS577981A
JPS577981A JP8324580A JP8324580A JPS577981A JP S577981 A JPS577981 A JP S577981A JP 8324580 A JP8324580 A JP 8324580A JP 8324580 A JP8324580 A JP 8324580A JP S577981 A JPS577981 A JP S577981A
Authority
JP
Japan
Prior art keywords
cds
film
sintered film
paste
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8324580A
Other languages
Japanese (ja)
Inventor
Nobuo Nakayama
Hitoshi Matsumoto
Akihiko Nakano
Seiji Ikegami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8324580A priority Critical patent/JPS577981A/en
Publication of JPS577981A publication Critical patent/JPS577981A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To easily obtain the semiconductor device having optional shape and area by a method wherein a diode is constituted using a substrate consisting of a CdS polycrystalline film and a Te polycrystalline film. CONSTITUTION:CdS paste is screen-printed on a transparent glass substrate 1, calcinated in a nitrogenous atmosphere and a CdS sintered film 2 is formed. On the other hand, a proper quantity of organic caking agent is added to Te powder, Te paste is formed by mixing them and after this paste is screen-printed on the CdS sintered film 2, a sintering is performed in a nitrogenous atmosphere and a Te sintered film 3 is formed. Then, ohmic electrodes 4 and 5 are formed on the Te sintered film 3 and the CdS sintered film 2 respectively, and lead wires 6 and 7 are connected to these electrodes 4 and 5.
JP8324580A 1980-06-18 1980-06-18 Semiconductor device Pending JPS577981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8324580A JPS577981A (en) 1980-06-18 1980-06-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8324580A JPS577981A (en) 1980-06-18 1980-06-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS577981A true JPS577981A (en) 1982-01-16

Family

ID=13796939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8324580A Pending JPS577981A (en) 1980-06-18 1980-06-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS577981A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155992U (en) * 1983-04-05 1984-10-19 ゼオン化成株式会社 Large liquid book processing container unit
JPS60111461A (en) * 1983-11-22 1985-06-17 Sharp Corp Picture reading element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155992U (en) * 1983-04-05 1984-10-19 ゼオン化成株式会社 Large liquid book processing container unit
JPS60111461A (en) * 1983-11-22 1985-06-17 Sharp Corp Picture reading element

Similar Documents

Publication Publication Date Title
JPS5427311A (en) Solid state pickup element
JPS55102279A (en) Method of fabricating photovoltaic element
JPS55103775A (en) Manufacture of semiconductor device
JPS51132973A (en) Semiconductor device
JPS55117287A (en) Photovoltaic element and fabricating the same
JPS5577179A (en) Solar cell and prepartion thereof
JPS5282088A (en) Semiconductor photoelectric converting element
JPS53138290A (en) Sintered-film solar battery of cadmium telluride
JPS57167687A (en) Semiconductor solar battery
JPS53126270A (en) Production of semiconductor devices
JPS5442691A (en) Conductive compound
JPS5354996A (en) Productin of solar battery
JPS52129279A (en) Production of semiconductor device
JPS5252370A (en) Fabrication of glass-sealed semiconductor device
JPS54100277A (en) Semiconductor element for hybrid integrated circuit
JPS53141579A (en) Manufacture of semiconductor device
JPS5211765A (en) Method of manufacturing semiconductor device
JPS5339870A (en) Semiconductor device
JPS5598855A (en) Solid oscillating element and oscillating device
JPS54113254A (en) Junction material for pellet bonding
JPS6417482A (en) Solar cell and manufacture thereof
JPS5252572A (en) Packaging construction for semiconductor element
JPS51123569A (en) Semiconductor manufacturing method
JPS5426675A (en) Manufacture for semiconductor device
JPS5373977A (en) Manufacture for schottky barrier type semiconductor device